- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377663 > LS3955 (Linear Integrated Systems) LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET PDF資料下載
參數(shù)資料
| 型號： | LS3955 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 低噪聲低漂移整體式雙N溝道結(jié)型場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | LS3955 |
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
SYMBOL
CHARACTERISTICS MIN.
OUTPUT CONDUCTANCE
Full Conduction
Operating
Differential
COMMON MODE REJECTION
-20 log |
V
GS1-2
/
V
DS
|
-20 log |
V
GS1-2
/
V
DS
|
NOISE
Figure
TYP. MAX.
UNITS
CONDITIONS
Y
OSS
Y
OS
|Y
OS1-2
|
--
--
--
--
0.1
0.01
5
1
0.1
μ
mho
μ
mho
μ
mho
V
DG
= 20V
V
DG
= 20V
V
GS
= 0
I
D
= 200
μ
A
CMR
CMR
--
--
100
75
--
--
dB
dB
V
DS
= 10 to 20V
V
DS
= 5 to 10V
I
D
= 200
μ
A
I
D
= 200
μ
A
NF
--
--
0.5
dB
V
DS
= 20V
f= 100Hz
V
DS
= 20V
NBW= 1Hz
V
GS
= 0
NBW= 6Hz
I
D
= 200
μ
A f= 10Hz
R
G
= 10M
e
n
Voltage
--
--
15
nV/
√
Hz
CAPACITANCE
Input
Reverse Transfer
Drain-to-Drain
C
ISS
C
RSS
C
DD
--
--
--
--
--
0.1
6
2
--
pF
pF
pF
V
DS
= 20V
V
GS
= 0
f= 1MHz
V
DG
= 20V
I
D
= 200
μ
A
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
DIM. A
0.165
0.185
0.040
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
34
5
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
D1
SS
G1
2
3
4
5
6
7
8
S2
G2
SS
D2
P-DIP
S1 1
D1
SS
G1
2
3
4
5
6
7
8
S2
G2
SS
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
(10.29)
MAX.
(4.78)
(5.00)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LS3956 | LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS3958 | LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS410860 | POW-R-BLOK Single Diode Isolated Module (600 Amperes / Up to 2400 Volts) |
| LS411060 | POW-R-BLOK Single Diode Isolated Module (600 Amperes / Up to 2400 Volts) |
| LS411260 | POW-R-BLOK Single Diode Isolated Module (600 Amperes / Up to 2400 Volts) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LS3955_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。