
Linear Integrated Systems
Linear Integrated Systems   
4042 Clipper Court, Fremont, CA 94538  TEL: (510) 490-9160  FAX: (510) 353-0261
1          7
C1
3
BOTTOM  VIEW
2
          6
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
     CHARACTERISTICS
BV
CBO
BV
CEO
BV
EBO
         BV
CCO
h
FE
           LS350    LS351    LS352
25
25          45
6.2
30          60
100
             UNITS
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
CONDITIONS
I
C
 = 10
μ
A
I
C
 = 10
μ
A
I
E
 = 10
μ
A        I
C
 = 0    NOTE 2
I
C
 = 10
μ
A
I
C
 = 10
μ
A
     Collector to Base Voltage
     Collector to Emitter Voltage
     Emitter to Base Voltage
     Collector to Collector Voltage
     DC Current Gain
45
60
60
6.2
100
200
600
200
600
200
0.5
0.2
0.2
2
2
0.5
200
3
V
V
V
V
I
E
 = 0
I
B
 = 0
6.2
I
E
 = 0
V
CE
= 5V
150
600
150
600
150
0.5
0.2
0.2
2
2
0.5
200
3
h
FE
     DC Current Gain
100
I
C
 = 100
μ
A
V
CE
= 5V
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
     DC Current Gain
     Collector Saturation Voltage
     Collector Cutoff Current
     Emitter Cutoff Current
     Output Capacitance
     Collector to Collector Capacitance
     Collector to Collector Leakage Current
     Current Gain Bandwidth Product
     Narrow Band Noise Figure
100
0.5
0.2
0.2
2
2
0.5
200
3
I
C
 = 1mA,
I
C
 = 1mA
I
E
 = 0
I
C
 = 0
I
E
 = 0
V
CC
 = 0
V
CC
 = NOTE4
I
C
 = 1mA
I
C
 = 100
μ
A
BW = 200Hz        R
G
 = 10 K
 f = 1KHz
V
CE
= 5V
I
B
 = 0.1mA
V
nA
nA
pF
pF
nA
MHz
dB
          V
CB
= NOTE 3
          V
EB
=3V
V
CB
= 5V
V
CE
 = 5V
V
CE
 = 5V
B1     E1     E2     B2
C1
   C2
26 X 29 MILS
E1
          E2
      C2
B1
  B2
LS350   LS351   LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
TIGHT V
BE
 MATCHING
HIGH f
T
ABSOLUTE MAXIMUM RATINGS  NOTE 1
@ 25
°
C (unless otherwise noted)
I
C
h
FE
≥
 200 @ 10
μ
A - 1mA
|V
BE1
-V
BE2
| = 0.2mV TYP.
275MHz TYP. @ 1mA
      Collector Current
10mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
   to  +200
°
C
+150
°
C
Maximum Power Dissipation            ONE SIDE         BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
2.3mW/
°
C
500mW
4.3mW/
°
C