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參數(shù)資料
| 型號(hào)： | LS101C-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY DIODES SOD80 QUADROMELF-E2 - Tape and Reel |
| 中文描述： | Schottky (Diodes & Rectifiers) 30mA 40 Volt 2.0 Amp IFSM |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | LS101C-GS18 |
LS101A, LS101B, LS101C
Vishay Semiconductors
www.vishay.com
Rev. 1.6, 09-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85628
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Reverse Current vs. Reverse Voltage
Fig. 2 -
Diode Capacitance vs. Reverse Voltage
Fig. 3 -
Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
LS101A
LS101B
LS101C
LS101A
LS101B
LS101C
LS101A
LS101B
LS101C
LS101A
LS101B
LS101C
LS101A
LS101B
LS101C
SYMBOL
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
D
C
D
C
D
MIN.
60
50
40
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
pF
Reverse breakdown voltage
I
R
= 10 μA
Leakage current
V
R
= 50 V
V
R
= 40 V
V
R
= 30 V
200
200
200
410
400
390
1000
950
900
2
2.1
2.2
Forward voltage drop
I
F
= 1 mA
I
F
= 15 mA
Diode capacitance
V
R
= 0 V, f = 1 MHz
I
R
s
e
0.01
0.1
1
10
100
0
10
V
R
- Rever
s
e Voltage (V)
15
20
25
30
35
40
45
50
16204
T
j
= 125 °C
T
j
= 100 °C
T
j
= 75 °C
T
j
= 50 °C
T
j
= 25 °C
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
10
V
R
- Re
v
erse
V
oltage (
V
)
15
20
25
30
35
40
45
50
16205
C
D
T
j
= 25 °C
5
0.01
0.10
1.00
10.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
F
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
16206
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