參數(shù)資料
型號(hào): LS-3101S
廠商: PerkinElmer Inc.
英文描述: Thyratrons
中文描述: 閘流管
文件頁數(shù): 3/6頁
文件大?。?/td> 49K
代理商: LS-3101S
grid driver circuit design, and the
performance required from the
thyratron itself. Contact the appli-
cations engineering department at
PerkinElmer to discuss the spe-
cific details of your requirement.
Conduction
Once the commutation interval
has ended, a typical hydrogen
thyratron will conduct with near-
ly constant voltage drop on the
order of 100 volts regardless of
the current through the tube.
Recovery
Thyratrons open (recover) via
diffusion of ions to the tube inner
walls and electrode surfaces,
where the ions can recombine
with electrons. This process takes
from 30 to 150 microseconds,
depending on the tube type, fill
pressure, and gas (hydrogen or
deuterium). The theoretical maxi-
mum pulse repetition rate is the
inverse of the recovery time.
Recovery can be promoted by
arranging to have a small nega-
tive DC bias voltage on the con-
trol grid when forward conduc-
tion has ceased. A bias voltage of
50 to 100 volts is usually suffi-
cient.
Recovery can also be improved
by arranging to have small nega-
tive voltage on the anode after
forward conduction has ceased.
In many radar circuits, a few-per-
cent negative mismatch between
a pulse-forming network and the
load ensures a residual negative
anode voltage. In laser circuits,
classical pulse-forming networks
are seldom used, so inverse
anode voltage may not be easily
generated. Recovery then strong-
ly depends on the characteristics
of the anode charging circuit. In
general, charging schemes
involving gently rising voltages
(i.e., resonant charging and ramp
charging) favor thyratron recov-
ery, and therefore allow higher
pulse repetition rates. Fast ramp-
ing and resistive charging put
large voltages on the anode
quickly, thus making recovery
more difficult. The ideal charging
scheme from the viewpoint of
thyratron recovery is command
charging, wherein voltage is
applied to the thyratron only an
instant before firing.
(a)
Filter
(b)
Zener
(c)
MOV
(d)
Spark Gap
Figure 4. Typical Grid Spike Suppression Circuits
CURRENT LIMITING AND/OR
MATCHING RESISTOR
Figure 3. Grid Circuit
GRID SPIKE
SUPPRESSION CIRCUIT
GRID DRIVER
CIRCUIT
相關(guān)PDF資料
PDF描述
LS0BB-1HT Surface Mountable Illuminated Switch
LS101A Small Signal Schottky Barrier Diodes
LS1014AB Dual Peripheral Driver
LS101 Telecom Switching Circuit
LS101A-GS08 Small Signal Schottky Barrier Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LS310-3 制造商:LINEAR 制造商全稱:LINEAR 功能描述:MONOLITHIC DUAL NPN TRANSISTORS
LS3-103K 制造商:INDSUP 功能描述:
LS311 制造商:LINEAR 制造商全稱:LINEAR 功能描述:MONOLITHIC DUAL NPN TRANSISTORS
LS311_PDIP 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR
LS311_SOIC 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL NPN TRANSISTOR