參數(shù)資料
型號(hào): LRS1832
英文描述: Flash ROM
中文描述: 閃存ROM
文件頁數(shù): 40/45頁
文件大小: 1382K
代理商: LRS1832
LRS1806A
38
15. Flash Memory Data Protection
Noises having a level exceeding the limit specified in the specification may be generated under specific operating conditions on
some systems. Such noises, when induced onto F-WE signal or power supply, may be interpreted as false commands and causes
undesired memory updating. To protect the data stored in the flash memory against unwanted writing, systems operating with the
flash memory should have the following write protect designs, as appropriate:
!
The below describes data protection method.
1. Protection of data in each block
Α
ny locked block by setting its block lock bit is protected against the data alternation. When F-WP is low, any locked-
down block by setting its block lock-down bit is protected from lock status changes.
By using this function, areas can be defined, for example, program area (locked blocks), and data area (unlocked
blocks).
For detailed block locking scheme, see Chapter 5.Command Definitions for Flash Memory.
2. Protection of data with F-V
PP
control
When the level of F-V
PP
is lower than V
PPLK
(F-V
PP
lockout voltage), write functions to all blocks are disabled. All
blocks are locked and the data in the blocks are completely protected.
3. Protection of data with F-RST
Especially during power transitions such as power-up and power-down, the flash memory enters reset mode by bringing
F-RST to low, which inhibits write operation to all blocks.
For detailed description on F-RST control, see Chapter 12.6 AC Electrical Characteristics for Flash Memory, Reset
Operations.
!
Protection against noises on F-WE signal
To prevent the recognition of false commands as write commands, system designer should consider the method for
reducing noises on F-WE signal.
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