參數(shù)資料
型號: LR401
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率LDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 35K
代理商: LR401
L4 1 DIE ID, GM vs VG
0.1
1
10
100
0
2
4
8
10
12
14
Vgs in Volts
ID
G
L4 1DIE CAP ACIT ANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
L R 4 0 1 P i n v s P o u t F r e q = 5 0 0 M h z ;
V d s = 2 8 V d c , I d q = . 8 A
0
20
40
60
80
100
120
140
160
180
0
1
2
3
4
5
6
7
8
9
10
P i n i n Watts
12
13
14
15
16
17
18
E fficiency @ 130W = 60%
Pout
Gain
P1dB = 100W
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
LR401
L4 1 DIE IV
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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