參數(shù)資料
型號： LP3987
廠商： National Semiconductor Corporation
英文描述： Micropower micro SMD 150 mA Ultra Low-Dropout CMOS Voltage Regulators with sleep MODE
中文描述： 微微型SMD一百五十零毫安超低壓差CMOS電壓調(diào)節(jié)器，睡眠模式
文件頁數(shù)： 5/17頁
文件大?。?/td> 533K
代理商： LP3987
Electrical Characteristics
(Continued)
Unless otherwise specified: V
= 1.8V, MODE = 1.8V, V
IN
= V
+ 0.5V, C
= 1 μF, I
= 1mA, C
= 1 μF. Typical
values and limits appearing in standard typeface are for T
= 25C. Limits appearing in
boldface type
apply over the entire
junction temperature range for operation, 40C to +125C. (Note 10) (Note 11)
Symbol
Parameter
Conditions
Typ
Limit
Units
Min
Max
43
I
SC(SLEEP)
Short Circuit Current in
Sleep MODE
Maximum Output
Current at MODE =
1.8V
Maximum Output
Current at MODE = 0V
Output Noise Voltage,
(Note 5)
Shutdown Temperature
(Note 5)
Output Grounded
28
mA
I
OUT(ON)
MODE = 1.8V
150
mA
I
OUT(SLEEP)
MODE = 0V
3
mA
e
n
BW = 10 Hz to 100 kHz,
C
OUT
= 1μF
Sleep MODE = 1.8V
70
μVrms
T
SHUTDOWN
155
C
Logic Control Characteristics
I
EN
Maximum Input Current
at EN
Logic Low Input
Threshold
Logic High Input
Threshold
Logic Low Input
Threshold
Logic High Input
Threshold
Maximum Input Current
at V
MODE
V
EN
= 0 and V
IN
= 6.0V
0.015
μA
V
IL
V
IN
= 3.05 to 6V
0.5
V
V
IH
V
IN
= 3.05 to 6V
1.2
V
V
MODE_L
V
IN
= 3.05 to 6V
0.5
V
V
MODE_H
V
IN
= 3.05 to 6V
1.2
V
I
MODE
V
MODE
= 0 and V
IN
= 6.0V
0.015
μA
Timing Characteristics
T
ON
Turn on Time (On
Mode), (Notes 5, 13)
Turn on Time (Sleep
Mode), (Note 5), (Note
14)
Sleep to On Mode
Settle Time, (Note 5),
(Note 15)
MODE = 1.8V, C
OUT
= 4.7μF
170
250
μs
T
SLEEP
MODE = 0V, C
OUT
= 4.7μF
0.5
5
ms
T
MODE
C
OUT
= 4.7μF, Enable = 1.8V
200
300
μs
Note 1:
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics tables.
Note 2:
All voltages are with respect to the potential at the GND pin.
Note 3:
The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula:
P
D
= (T
J
- T
A
)/
θ
JA
,
Where T
is the junction temperature, T
is the ambient temperature, and
θ
JA
is the junction-to-ambient thermal resistance. For instant, if V
in target application
is 4.2V and worse case current consumption is 90mA. Therefore P
= (4.2-2.7)
*
0.09 =135mW. With P
MAX_DISSIPATION
is 135mW, T
Jmax
is 125C
and worse case ambient temperature (TA ) in target application is 85C,
θ
JA
= (125-85)/0.135 = 296C/W.
Note 4:
The human body model is 100pF discharged through 1.5k
.
Note 5:
This electrical specification is guaranteed by design.
L
www.national.com
5
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LP3987-1.5B3B 制造商:POWER 制造商全稱:Lowpower Semiconductor inc 功能描述:300mA,Ultra-LowNoise Ultra-fast CMOS LDO Regrlator
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