參數(shù)資料
型號(hào)： LP3000SOT89
英文描述： LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
中文描述： 低噪聲，高線(xiàn)性包裝的PHEMT器件
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 47K
代理商： LP3000SOT89
LP3000P100
P
ACKAGED
2W
P
OWER
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
FEATURES
33 dBm Output Power at 1-dB Compression at 15 GHz
8 dB Power Gain at 15 GHz
60% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
μ
m x 3000
μ
m Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25
°
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
I
DSS
P-1dB
G-1dB
PAE
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
;
P
IN
= 17 dBm
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 5 mA
I
GS
= 8 mA
800
31.5
7
975
33
8
45
1100
mA
dBm
dB
%
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
1700
900
15
mA
mS
μ
A
V
V
700
130
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
-0.25
-12
-1.2
-15
-2.0
|V
BDGD
|
I
GD
= 8 mA
-12
-16
V
相關(guān)PDF資料
PDF描述
LP3000SOT89-2 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LP3000SOT89-3 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LP395
LP395Z IC-POWER TRANSISTOR
LP3961
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LP3000SOT89-1 制造商:FILTRONIC 制造商全稱(chēng):FILTRONIC 功能描述:LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LP3000SOT89-2 制造商:FILTRONIC 制造商全稱(chēng):FILTRONIC 功能描述:LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LP3000SOT89-3 制造商:FILTRONIC 制造商全稱(chēng):FILTRONIC 功能描述:LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
LP30020 制造商:Cooper Wiring Devices 功能描述:
LP30030 制造商:Cooper Wiring Devices 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*