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參數(shù)資料
| 型號： | LN159 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Bi-directional Infrared Light Emitting Diode |
| 中文描述： | 1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 封裝： | LSTLR102-005, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 43K |
| 代理商： | LN159 |
1
Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
I
1
I
2
1: Anode
2: Cathode
Unit : mm
8
8
8
8
8
8
2.
2.
8
2.0
2-0.5
±
0.1
0.15
0.5
±
0.1
2-0.7 max.
2-R0.7
1.4
±
0.2
2.8
±
0.2
2-C0.5
(
2.8
±
0.2
1.3
±
0.2
0
1
0
2
±
0
0
1
2
N
1
±
1
3
±
0
Features
Two-way directivity
High-power output, high-efficiency : P
O
= 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Thin type package modified from LN59
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
For light source of VCR (VHS System)
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
75
50
1
3
–25 to +65
– 30 to +85
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
e*
λ
P
λ
V
F
I
R
C
t
Conditions
min
1.2
typ
max
Unit
mW/sr
nm
nm
V
μ
A
pF
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
I
F
= 50mA
I
F
= 20mA
I
F
= 20mA
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
940
50
1.3
1.5
10
35
*
Radiant intensity I
e
shows each value of intensity I
1
and I
2
in two directions.
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