參數(shù)資料
型號: LMX2314
廠商: National Semiconductor Corporation
英文描述: 1.2 GHz Frequency Synthesizer for RF Personal Communications
中文描述: 1.2千兆赫頻率合成射頻個人通信
文件頁數(shù): 8/20頁
文件大小: 371K
代理商: LMX2314
Charge Pump Current Specification Definitions
TL/W/11766–41
I1
e
CP sink current at V
Do
e
V
P
b
D
V
I2
e
CP sink current at V
Do
e
V
P
/2
I3
e
CP sink current at V
Do
e
D
V
D
V
e
Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
CC
and ground. Typical values are between 0.5V and 1.0V.
I4
e
CP source current at V
Do
e
V
P
b
D
V
I5
e
CP source current at V
Do
e
V
P
/2
I6
e
CP source current at V
Do
e
D
V
1. I
Do
vs V
Do
e
[
(/2
*
l
I1
l
b
l
I3
l
]
/
[
(/2
*
à
l
I1
l
a
l
I3
l
ó
] *
100%
2. I
Do-sink
vs I
Do-source
e
[
l
I2
l
b
l
I5
l
]
/
[
(/2
*
à
l
I2
l
a
l
I5
l
ó
] *
100%
3. I
Do
vs T
A
e
[
l
I2
@
temp
l
b
l
I2
@
25
§
C
l
]
/
l
I2
@
25
§
C
l
*
100%
4. K
w
e
Phase detector/charge pump gain constant
e
(/2
*
à
l
I2
l
a
l
I5
l
ó
Charge Pump Output Current magnitude variation vs Voltage
e
and
[
(/2
*
l
I4
l
b
l
I6
l
]
/
[
(/2
*
à
l
I4
l
a
l
I6
l
ó
] *
100%
Charge Pump Output Current Sink vs Source Mismatch
e
Charge Pump Output Current magnitude variation vs Temperature
e
and
[
l
I5
@
temp
l
b
l
I5
@
25
§
C
l
]
/
l
I5
@
25
§
C
l
*
100%
RF Sensitivity Test Block Diagram
TL/W/11766–42
Note 1:
N
e
10,000
R
e
50
P
e
64
Note 2:
Sensitivity limit is reached when the error of the divided RF output, f
OUT
, is greater than or equal to 1 Hz.
8
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