Notice that R
參數(shù)資料
型號(hào): LMV821M7X/NOPB
廠商: National Semiconductor
文件頁(yè)數(shù): 14/38頁(yè)
文件大小: 0K
描述: IC OP AMP RRO 5MHZ SC-70-5
標(biāo)準(zhǔn)包裝: 3,000
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 2 V/µs
增益帶寬積: 5.6MHz
電流 - 輸入偏壓: 100nA
電壓 - 輸入偏移: 3500µV
電流 - 電源: 300µA
電流 - 輸出 / 通道: 45mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 5.5 V,±1.25 V ~ 2.75 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP(5 引線),SC-88A,SOT-353
供應(yīng)商設(shè)備封裝: SC-70-5
包裝: 帶卷 (TR)
其它名稱: *LMV821M7X
*LMV821M7X/NOPB
LMV821M7X
LMV821M7X-ND
LMV821M7X/NOPBTR
SNOS032G – AUGUST 1999 – REVISED NOVEMBER 2013
(5)
Notice that R3 could also be calculated as 0.707 of Ra or R2.
The circuit was implemented and its cutoff frequency measured. The cutoff frequency measured at 2.92 kHz.
The circuit also showed good repeatability. Ten different LMV822 samples were placed in the circuit. The
corresponding change in the cutoff frequency was less than a percent.
TRI-LEVEL VOLTAGE DETECTOR
The tri-level voltage detector of Figure 44 provides a type of window comparator function. It detects three
different input voltage ranges: Min-range, Mid-range, and Max-range. The output voltage (VO) is at VCC for the
Min-range. VO is clamped at GND for the Mid-range. For the Max-range, VO is at Vee. Figure 45 shows a VO vs.
VI oscilloscope photo per the circuit of Figure 44.
Its operation is as follows: VI deviating from GND, causes the diode bridge to absorb IIN to maintain a clamped
condition (VO= 0V). Eventually, IIN reaches the bias limit of the diode bridge. When this limit is reached, the
clamping effect stops and the op amp responds open loop. The design equation directly preceding Figure 45,
shows how to determine the clamping range. The equation solves for the input voltage band on each side GND.
The mid-range is twice this voltage band.
Figure 44. Tri-level Voltage Detector
Copyright 1999–2013, Texas Instruments Incorporated
21
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