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參數(shù)資料
| 型號(hào)： | LMV232TLX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | Dual-Channel Integrated Mean Square Power Detector for CDMA & WCDMA |
| 中文描述： | 50 MHz - 2000 MHz RF/MICROWAVE LINEAR DETECTOR |
| 封裝： | 1.50 X 1.50 MM, 0.60 MM HEIGHT, LEAD FREE, MO-211DD, MICRO SMD, 8 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 779K |
| 代理商： | LMV232TLX |
2.7 DC and AC Electrical Characteristics
(Continued)
Unless otherwise specified, all limits are guaranteed to V
DD
= 2.7V; T
J
= 25C.
Boldface
limits apply at temperature extremes.
(Note 4)
Symbol
K
DET
Parameter
Condition
Min
Typ
21
10
10
10
60
1.0
58
62
58
55
Max
Units
Detection Slope
900 MHz
1800 MHz
1900 MHz
2000 MHz
Lower 3 dB Point of Detection Slope
Upper 3 dB Point of Detection Slope
900 MHz
1800 MHz
1900 MHz
2000 MHz
μA/mW
f
LOW
f
HIGH
A
ISO
LF Input Corner Frequency
HF Input Corner Frequency
Channel Isolation
MHz
GHz
dB
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2:
Human body model: 1.5 k
in series with 100 pF. Machine model, 0
in series with 100 pF.
Note 3:
The maximum power dissipation is a function of T
,
θ
and T
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(MAX)
- T
A
)/
θ
JA
. All numbers apply for packages soldered directly into a PC board.
Note 4:
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
J
= T
A
. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
J
>
T
A
.
Note 5:
Power in dBV = dBm + 13 when the impedance is 50
.
Note 6:
All limits are guaranteed by design or statistical analysis.
Note 7:
Typical values represent the most likely parametric norm.
Note 8:
Device is set in active mode with a 10 k
resistor from V
DD
to RF
IN
/E
N
. RF signal is applied using a 50
RF signal generator AC coupled to the RF
IN
/E
N
pin using a 100 pF coupling capacitor.
Note 9:
Turn-on time is measured by connecting a 10 k
resistor to the RF
IN
/E
N
pin. Be aware that in the actual application on the front page, the RC-time constant
of resistor R2 and capacitor C adds an additional delay.
Note 10:
Typical numbers represent the 3-sigma value of 10k units. 3-sigma value of variation between 40C / 25C and variation between 25C / 85C.
L
www.national.com
3
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