參數(shù)資料
型號: LMH6533
廠商: National Semiconductor Corporation
英文描述: Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator
中文描述: 四-通道激光二極管,配有雙輸出,LVDS接口和手足口病振蕩器驅(qū)動
文件頁數(shù): 3/11頁
文件大?。?/td> 262K
代理商: LMH6533
+5V DC Electrical Characteristics
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, R
L
= 10
.
Boldface
limits apply at the temperature extremes.
(Note 8)
Symbol
I
Swr
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
182.5
Max
(Note 7)
210
Units
mA
Supply Current, Write Mode
EN2 = EN3 = EN4 = High; (Note 12)
I2 = I3 = I4 = I
R
= 125 μA
All Channels Disable, No Input
Current. SELB = 0; R
AA
, R
AB
, R
FA
,
R
FB
=
I
S
Supply Current
45
mA
+5V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25C, R
L
= 10
.
Boldface
limits apply at the temperature extremes.
(Note 8)
Symbol
t
r
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
0.50
Max
(Note 7)
Units
ns
Write Rise Time
I
OUT
= 40 mA (Read) + 40 mA (10%
to 90%) R
LOAD
= 5
I
OUT
= 40 mA (Read) + 40 mA (90%
to 10%) R
LOAD
= 5
I
OUT
= 100 mA (Read) + 100 mA
(10% to 90%) R
LOAD
= 5
I
OUT
= 100 mA (Read) + 100 mA
(90% to 10%) R
LOAD
= 5
I
OUT
= 150 mA (Read) + 150 mA
(10% to 90%) R
LOAD
= 5
I
OUT
= 150 mA (Read) + 150 mA
(90% to 10%) R
LOAD
= 5
I
OUT
= 40 mA (Read) + 40 mA
I
OUT
= 40 mA; R
LOAD
= 50
;
f = 10 MHz; ENOSC = Low
Switched on EN2 and EN2B
Switched on EN2 and EN2B
Switch on ENR
Switch on ENR
t
f
Write Fall Time
0.76
ns
t
r
Write Rise Time
0.65
ns
t
f
Write Fall Time
0.75
ns
t
r
Write Rise Time
0.78
ns
t
f
Write Fall Time
0.77
ns
OS
IN
0
Output Current Overshoot
Output Current Noise
16
0.47
%
nA/
t
ON
t
OFF
t
disr
t
enr
t
dis
t
en
BW
C
f
OSC
I
OUT
ON Prop. Delay
I
OUT
OFF Prop. Delay
Disable Time, Read Channel
Enable Time, Read Channel
Disable Time, (Shutdown)
Enable Time, (Shutdown)
Channel Bandwidth, –3 dB
Oscillator Frequency
0.45
0.40
1.1
1.1
3
3
2.5
330
ns
ns
ns
ns
μs
μs
MHz
MHz
I
OUT
= 50 mA, All Channels
R
F
= 3 k
Range 200 MHz to 600 MHz
270
390
T
DO
T
EO
Disable Time Oscillator
Enable Time Oscillator
5.2
5.4
ns
ns
Note 1:
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2:
For testing purposes, ESD was applied using ‘Human body model’; 1.5 k
in series with 100 pF
Note 3:
Machine Model, 0
in series with 200 pF.
Note 4:
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150C
Note 5:
The maximum power dissipation is a function of T
J(MAX
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient temperature is PD =
(T
J(MAX)
-T
A
) /
θ
JA
. All numbers apply for packages soldered directly onto a PC board.
Note 6:
Typical values represent the most likely parametric norm.
Note 7:
All limits are guaranteed by testing or statistical analysis.
Note 8:
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
J
= T
A
. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where
T
J
>
T
A
. See Applications section for information on temperature de-rating of this device.
Note 9:
V
GPD
= ground potential difference voltage between driver and receiver
L
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