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參數(shù)資料
| 型號： | LMH6503MT |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | Wideband, Low Power, Linear Variable Gain Amplifier |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDSO14 |
| 封裝： | TSSOP-14 |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 1009K |
| 代理商： | LMH6503MT |
Application Information
(Continued)
OPERATING AT LOWER SUPPLY VOLTAGES
The LMH6503 is rated for operation down to 5V supplies (V
+
- V
). There are some specifications shown for operation at
±
2.5V within the data sheet (i.e. Frequency Response,
CMRR, PSRR, Gain vs. V
G
, etc.). Compared to
±
5V opera-
tion, at lower supplies:
a) V
G
range constricts. Referring to
Figure 9
, note that
V
(V
G
voltage required to get maximum gain) is
0.5V (V
=
±
2.5V) compared to 1.0V for V
=
±
5V. At the
same time, gain cut-off (V
G_MIN
) would shift to 0.5V from
- 1V with V
S
=
±
5V.
Table 1 shows the approximate expressions for various
V
G
voltages as a function of V
-
:
Table 1: V
G
Definition Based on V
V
G
Definition
Gain Cut-off
A
VMAX
/2
A
VMAX
Expression (V)
0.2 x V
0
0.2 x V
V
G_MIN
V
G_MID
V
G_MAX
b) V
(maximum permissible voltage on V
) is re-
duced. This is due to limitations within the device arising
from transistor headroom. Beyond this limit, device per-
formance will be affected (non-destructive). Referring to
Figure 9
, note that with V
+
= 2.5V, and V
= 4V, V
is approaching V
and already "Max gain" is re-
duced by 1dB. This means that operating under these
conditions has reduced the maximum permissible voltage
on V
G
to a level below what is needed to get Max gain. If
supply voltages are asymmetrical, reference
Figure 9
and
Figure 10
plots to make sure the region of operation is not
overly restricted by the "pinching" of V
G_LIMIT
, and V
G-
_MAX
curves.
c) "Max_gain" reduces. There is an intrinsic reduction in
max gain when the total supply voltage is reduced (see
Typical Performance Characteristics plots for Gain vs. V
G
(V
=
±
2.5V). In addition, there is the more drastic
mechanism described in "b" above and shown in
Figure
9
.
Similar plots for V
+
= 5V operation are shown in
Figure 10
for
comparison and reference.
20073936
FIGURE 8. Transformer Coupled Single Supply VGA
20073926
FIGURE 9. V
G_MAX
, V
G_LIMIT
, & Max-gain vs. V
-
(V
+
20073925
FIGURE 10. V
G_MAX
, V
G_LIMIT
, & Max-gain vs. V
-
(V
+
L
www.national.com
17
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMH6503MT/NOPB | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6503MTX | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6503MTX/NOPB | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
| LMH6504 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Wideband, Low Power, Variable Gain Amplifier |
| LMH6504MA | 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel |
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