參數(shù)資料
型號(hào): LM9061N
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: MOSFETs
英文描述: Power MOSFET Driver with Lossless Protection
中文描述: BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝: DIP-8
文件頁數(shù): 11/14頁
文件大?。?/td> 234K
代理商: LM9061N
Application Hints
(Continued)
manufacturer for all of the MOSFETs in the array. Also, all
MOSFETs should have the same style heat sink or, ideally,
all mounted on the same heat sink. The electrical connec-
tion of the MOSFETs should get special attention. With typi-
cal R
DS(ON)
values in the range of tens of milli-Ohms, a
poor electrical connection for one of the MOSFETs can ren-
der it useless in the circuit.
Figure 7 shows a circuit with four parallel NDP706A
MOSFETs. This particular MOSFET has a typical R
DS(ON)
of 0.013
X
with a T
J
of 25
§
C, and 0.020
X
with a T
J
of
a
125
§
C.
With the V
DS
threshold voltage being set to 500 mV, this
circuit will provide a typical maximum load current of 150A
at 25
§
C, and a typical maximum load current of 100A at
125
§
C. The maximum dissipation, per MOSFET, will be
nearly 20W at 25
§
C, and 12.5W at 125
§
C. With up to 20W
being dissipated by each of the four devices, an effective
heat sink will be required to keep the T
J
as low as possible
when operating near the maximum load currents.
TL/H/12317–15
FIGURE 7. Driving Multiple MOSFETs
11
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