參數(shù)資料
型號(hào): LM833D
廠商: ON SEMICONDUCTOR
元件分類: 音頻/視頻放大
英文描述: DUAL OPERATIONAL AMPLIFIER
中文描述: 1 CHANNEL, AUDIO AMPLIFIER, PDSO8
封裝: SOIC-8
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 133K
代理商: LM833D
Device
Operating
Temperature Range
Package
SEMICONDUCTOR
TECHNICAL DATA
DUAL OPERATIONAL
AMPLIFIER
ORDERING INFORMATION
LM833N
LM833D
TA = – 40
°
to +85
°
C
Plastic DIP
SO–8
PIN CONNECTIONS
Order this document by LM833/D
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
N SUFFIX
PLASTIC PACKAGE
CASE 626
1
1
8
8
2
(Top View)
1
3
4
8
7
6
5
Output 1
Inputs 1
Output 2
Inputs 2
VEE
VCC
1
2
1
MOTOROLA ANALOG IC DEVICE DATA
The LM833 is a standard low–cost monolithic dual general–purpose
operational amplifier employing Bipolar technology with innovative
high–performance concepts for audio systems applications. With high
frequency PNP transistors, the LM833 offers low voltage noise
(4.5 nV/ Hz ), 15 MHz gain bandwidth product, 7.0 V/
μ
s slew rate, 0.3 mV
input offset voltage with 2.0
μ
V/
°
C temperature coefficient of input offset
voltage. The LM833 output stage exhibits no deadband crossover distortion,
large output voltage swing, excellent phase and gain margins, low open loop
high frequency output impedance and symmetrical source/sink AC
frequency response.
The LM833 is specified over the automotive temperature range and is
available in the plastic DIP and SO–8 packages (P and D suffixes). For an
improved performance dual/quad version, see the MC33079 family.
Low Voltage Noise: 4.5 nV/ Hz
High Gain Bandwidth Product: 15 MHz
High Slew Rate: 7.0 V/
μ
s
Low Input Offset Voltage: 0.3 mV
Low T.C. of Input Offset Voltage: 2.0
μ
V/
°
C
Low Distortion: 0.002%
Excellent Frequency Stability
Dual Supply Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (VCC to VEE)
Input Differential Voltage Range (Note 1)
VS
VIDR
VIR
tSC
TA
TJ
Tstg
PD
+36
V
30
V
Input Voltage Range (Note 1)
±
15
V
Output Short Circuit Duration (Note 2)
Indefinite
Operating Ambient Temperature Range
–40 to +85
°
C
Operating Junction Temperature
+150
°
C
Storage Temperature
–60 to +150
°
C
Maximum Power Dissipation (Notes 2 and 3)
500
mW
NOTES:
1.Either or both input voltages must not exceed the magnitude of VCC or VEE.
2.Power dissipation must be considered to ensure maximum junction temperature
(TJ) is not exceeded (see power dissipation performance characteristic).
3.Maximum value at TA
85
°
C.
Motorola, Inc. 1996
Rev 0
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