參數(shù)資料
型號(hào)： LM6162N
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 音頻／視頻放大
英文描述： High Speed Operational Amplifier
中文描述： 1 CHANNEL, VIDEO AMPLIFIER, PDIP8
封裝： PLASTIC, DIP-8
文件頁數(shù)： 3/13頁
文件大?。?/td> 248K
代理商： LM6162N
DC Electrical Characteristics
(Continued)
These limits apply for supply voltage
e
g
15V, V
CM
e
0V, and R
L
t
100 k
X
, unless otherwise specified. Limits in standard
typeface are for T
A
e
T
J
e
25
§
C; limits in
boldface type
apply over the
Operating Temperature Range
.
(Note 7)
Typical
LM6162
Limit
(Note 8)
LM6262
Limit
(Note 8)
LM6362
Limit
(Note 8)
Symbol
Parameter
Conditions
Units
V
O
Output Voltage Swing
Supply
e a
5V and
R
L
e
2 k
X
(Note 10)
4.2
3.5
3.3
3.5
3.3
3.4
3.3
V
min
1.3
1.7
2.0
1.7
1.9
1.8
1.9
V
max
I
OSC
Output Short
Circuit Current
Sourcing
65
30
20
30
25
30
25
mA
min
Sinking
65
30
20
30
25
30
25
mA
min
I
S
Supply Current
5.0
6.5
6.8
6.5
6.7
6.8
6.9
mA
max
AC Electrical Characteristics
These limits apply for supply voltage
e
g
15V, V
CM
e
0V, R
L
t
100 k
X
, and C
L
s
5 pF, unless otherwise specified. Limits in
standard typeface are for T
A
e
T
J
e
25
§
C; limits in
boldface type
apply over the
Operating Temperature Range
.
(Note 7)
Typical
LM6162
Limit
(Note 8)
LM6262
Limit
(Note 8)
LM6362
Limit
(Note 8)
Symbol
Parameter
Conditions
Units
GBW
Gain-Bandwidth Product
f
e
20 MHz
100
80
55
80
65
75
65
MHz
min
Supply
e
g
5V
70
MHz
SR
Slew Rate
A
V
e a
2 (Note 11)
300
200
180
200
180
200
180
V/
m
s
min
Supply
e
g
5V
200
V/
m
s
PBW
Power Bandwidth
V
OUT
e
20 V
PP
4.5
MHz
t
s
Settling Time
10V step, to 0.1%
A
V
e b
1, R
L
e
2 k
X
100
ns
w
m
Phase Margin
A
V
e a
2
45
deg
Differential Gain
NTSC, A
V
e a
2
k
0.1
%
Differential Phase
NTSC, A
V
e a
2
k
0.1
deg
e
n
Input Noise Voltage
f
e
10 kHz
10
nV/
S
Hz
pA/
S
Hz
i
n
Input Noise Current
f
e
10 kHz
1.2
Note 1:
Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the
device beyond its rated operating conditions.
Note 2:
The ESD protection circuitry between the inputs will begin to conduct when the differential input voltage reaches 8V.
Note 3: a)
In addition, the voltage between the V
a
pin and either input pin must not exceed 36V.
b) When the voltage applied to an input pin is driven more than 0.3V below the negative supply pin voltage, a substrate diode begins to conduct. Current
through this pin must then be kept less than 20 mA to limit damage from self-heating.
Note 4:
Although the output current is internally limited, continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum
allowed junction temperature of 150
§
C.
Note 5:
This value is the average voltage that the weakest pin combinations can withstand and still conform to the datasheet limits. The test circuit used consists of
the human body model, 100 pF in series with 1500
X
.
Note 6:
The typical thermal resistance, junction-to-ambient, of the molded plastic DIP (N package) is 105
§
C/W. For the molded plastic SO (M package), use
155
§
C/W. All numbers apply for packages soldered directly into a printed circuit board.
Note 7:
Typical values are for T
J
e
25
§
C, and represent the most likely parametric norm.
Note 8:
Limits are guaranteed, by testing or correlation.
Note 9:
Voltage Gain is the total output swing (20V) divided by the magnitude of the input signal required to produce that swing.
Note 10:
For single-supply operation, the following conditions apply: V
a
e
5V, V
b
e
0V, V
CM
e
2.5V, V
OUT
e
2.5V. Pin 1 and Pin 8 (V
OS
Adjust pins) are each
connected to pin 4 (V
b
) to realize maximum output swing. This connection will increase the offset voltage.
Note 11:
V
IN
e
10V step. For
g
5V supplies, V
IN
e
1V step.
Note 12:
A military RETS electrical test specification is available on request.
3
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