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參數(shù)資料
| 型號(hào)： | LM5109MA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100V / 1A Peak Half Bridge Gate Driver |
| 中文描述： | 1 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 657K |
| 代理商： | LM5109MA |
LM5109
100V / 1A Peak Half Bridge Gate Driver
General Description
The LM5109 is a low cost high voltage gate driver, designed
to drive both the high side and the low side N-Channel
MOSFETs in a synchronous buck or a half bridge configura-
tion. The floating high-side driver is capable of working with
rail voltages up to 100V. The outputs are independently
controlled with TTL compatible input thresholds. A robust
level shifter technology operates at high speed while con-
suming low power and providing clean level transitions from
the control input logic to the high side gate driver. Under-
voltage lockout is provided on both the low side and the high
side power rails. The device is available in the SOIC-8 and
the thermally enhanced LLP-8 packages.
Features
n
Drives both a high side and low side N-Channel
MOSFET
n
1A peak output current (1.0A sink / 1.0A source)
n
Independent TTL compatible inputs
n
Bootstrap supply voltage to 118V DC
n
Fast propagation times (27 ns typical)
n
Drives 1000 pF load with 15ns rise and fall times
n
Excellent propagation delay matching (2 ns typical)
n
Supply rail under-voltage lockout
n
Low power consumption
n
Pin compatible with ISL6700
Typical Applications
n
Current Fed push-pull converters
n
Half and Full Bridge power converters
n
Solid state motor drives
n
Two switch forward power converters
Package
n
SOIC-8
n
LLP-8 (4 mm x 4 mm)
Simplified Block Diagram
20150501
FIGURE 1.
April 2005
L
2005 National Semiconductor Corporation
DS201505
www.national.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LM5109MAX | 100V / 1A Peak Half Bridge Gate Driver |
| LM5109 | 100V / 1A Peak Half Bridge Gate Driver |
| LM5110-2M | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
| LM5110-2MX | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
| LM5110-2SD | Dual 5A Compound Gate Driver with Negative Output Voltage Capability |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5109MA/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5109MAX | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5109MAX/J7001236 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述: |
| LM5109MAX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5109SD | 功能描述:IC DVR HALF-BRIDGE 100V 1A 8LLP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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