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參數(shù)資料
| 型號(hào)： | LM5105SDX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 100V Half Bridge Gate Driver with Programmable Dead-time |
| 中文描述： | 1.8 A HALF BRDG BASED MOSFET DRIVER, DSO10 |
| 封裝： | 4 X 4 MM, LLP-10 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 743K |
| 代理商： | LM5105SDX |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
to V
SS
HB to HS
IN and EN to V
SS
LO to V
SS
HO to V
SS
HS to V
SS
(Note 6)
HB to V
SS
RDT to V
SS
Junction Temperature
–0.3V to +18V
–0.3V to +18V
–0.3V to V
DD
+ 0.3V
–0.3V to V
DD
+ 0.3V
HS – 0.3V to HB + 0.3V
5V to +100V
118V
–0.3V to 5V
+150C
Storage Temperature Range
ESD Rating HBM
(Note 2)
–55C to +150C
2 kV
Recommended Operating
Conditions
V
DD
HS (Note 6)
HB
HS Slew Rate
Junction Temperature
+8V to +14V
–1V to 100V
HS + 8V to HS + 14V
<
50V/ns
–40C to +125C
Electrical Characteristics
type
apply over the full
operating junction temperature range
. Unless otherwise specified, V
DD
= HB = 12V, V
SS
= HS =
0V, EN = 5V. No load on LO or HO. RDT= 100k
(Note 4).
Specifications in standard typeface are for T
J
= +25C, and those in
boldface
Symbol
SUPPLY CURRENTS
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
INPUT IN and EN
V
IL
V
IH
R
pd
DEAD-TIME CONTROLS
VRDT
IRDT
UNDER VOLTAGE PROTECTION
V
DDR
V
DD
Rising Threshold
V
DDH
V
DD
Threshold Hysteresis
V
HBR
HB Rising Threshold
V
HBH
HB Threshold Hysteresis
BOOT STRAP DIODE
V
DL
Low-Current Forward Voltage
V
DH
High-Current Forward Voltage
R
D
Dynamic Resistance
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
V
OHL
High-Level Output Voltage
Parameter
Conditions
Min
Typ
Max
Units
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Current, Quiescent
HB to V
SS
Current, Operating
IN = EN = 0V
f = 500 kHz
IN = EN = 0V
f = 500 kHz
HS = HB = 100V
f = 500 kHz
0.34
1.65
0.06
1.3
0.05
0.1
0.6
3
0.2
3
10
mA
mA
mA
mA
μA
mA
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pulldown Resistance Pin IN and EN
0.8
1.8
1.8
200
V
V
k
2.2
500
100
Nominal Voltage at RDT
RDT Pin Current Limit
2.7
0.75
3
3.3
2.25
V
RDT = 0V
1.5
mA
6.0
6.9
0.5
6.6
0.4
7.4
V
V
V
V
5.7
7.1
I
VDD-HB
= 100 μA
I
VDD-HB
= 100 mA
I
VDD-HB
= 100 mA
0.6
0.85
0.8
0.9
1.1
1.5
V
V
I
LO
= 100 mA
I
LO
= –100 mA,
V
OHL
= V
DD
– V
LO
LO = 0V
LO = 12V
0.25
0.4
V
0.35
0.55
V
I
OHL
I
OLL
HO GATE DRIVER
V
OLH
V
OHH
Peak Pullup Current
Peak Pulldown Current
1.8
1.6
A
A
Low-Level Output Voltage
High-Level Output Voltage
I
HO
= 100 mA
I
HO
= –100 mA,
V
OHH
= HB – HO
HO = 0V
0.25
0.4
V
0.35
0.55
V
I
OHH
Peak Pullup Current
1.8
A
L
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|---|---|
| LM5105SDX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5106 | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:100V Half Bridge Gate Driver with Programmable |
| LM5106MM | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5106MM/NOPB | 功能描述:功率驅(qū)動(dòng)器IC 100V HALF BRIDGE GATE DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5106MMX | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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