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參數(shù)資料
| 型號： | LM5105SD |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100V Half Bridge Gate Driver with Programmable Dead-time |
| 中文描述： | 1.8 A HALF BRDG BASED MOSFET DRIVER, DSO10 |
| 封裝： | 4 X 4 MM, LLP-10 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 743K |
| 代理商： | LM5105SD |
Operational Notes
(Continued)
Diode Power Dissipation V
IN
= 80V
20137506
Diode Power Dissipation V
IN
= 40V
20137507
The total IC power dissipation can be estimated from the
above plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because
the diode losses can be significant, an external diode placed
in parallel with the internal bootstrap diode (refer to
Figure 6
)
and can be helpful in removing power from the IC. For this to
be effective, the external diode must be placed close to the
IC to minimize series inductance and have a significantly
lower forward voltage drop than the internal diode.
HS Transient Voltages Below Ground
The HS node will always be clamped by the body diode of
the lower external FET. In some situations, board resis-
tances and inductances can cause the HS node to tran-
siently swing several volts below ground. The HS node can
swing below ground provided:
1.
HS must always be at a lower potential than HO. Pulling
HO more than -0.3V below HS can activate parasitic
transistors resulting in excessive current to flow from the
HB supply possibly resulting in damage to the IC. The
same relationship is true with LO and VSS. If necessary,
a Schottky diode can be placed externally between HO
and HS or LO and GND to protect the IC from this type
of transient. The diode must be placed as close to the IC
pins as possible in order to be effective.
2.
HB to HS operating voltage should be 15V or less .
Hence, if the HS pin transient voltage is -5V, VDD should
be ideally limited to 10V to keep HB to HS below 15V.
3.
A low ESR bypass capacitor between HB to HS as well
as VCC to VSS is essential for proper operation. The
capacitor should be located at the leads of the IC to
minimize series inductance. The peak currents from LO
and HO can be quite large. Any series inductances with
the bypass capacitor will cause voltage ringing at the
leads of the IC which must be avoided for reliable op-
eration.
L
www.national.com
10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LM5105SD/NOPB | 功能描述:功率驅動器IC 100V HALF-BRIDGE DRIVER W/ DELAY RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5105SDX | 功能描述:功率驅動器IC RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5105SDX/NOPB | 功能描述:功率驅動器IC RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5106 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:100V Half Bridge Gate Driver with Programmable |
| LM5106MM | 功能描述:功率驅動器IC RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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