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參數(shù)資料
| 型號(hào)： | LM5104SD |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | High Voltage Half-Bridge Gate Driver with Adaptive Delay |
| 中文描述： | 1.8 A HALF BRIDGE BASED PRPHL DRVR, DSO10 |
| 封裝： | 4 X 4 MM, LLP-10 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 375K |
| 代理商： | LM5104SD |
LM5104 Waveforms
Operational Description
ADAPTIVE SHOOT-THROUGH PROTECTION
LM5104 is a high voltage, high speed dual output driver
designed to drive top and bottom MOSFET’s connected in
synchronous buck or half-bridge configuration, from one ex-
ternally provided PWM signal. LM5104 features adaptive
delay to prevent shoot-through current through top and bot-
tom MOSFETs during switching transitions. Referring to the
timing diagram
Figure 3
, the rising edge of the PWM input
(IN) turns off the bottom MOSFET (LO) after a short propa-
gation delay (t
). An adaptive circuit in the LM5104 monitors
the bottom gate voltage (LO) and triggers a programmable
delay generator when the LO pin falls below an internally set
threshold (
≈
Vdd/2). The gate drive of the upper MOSFET
(HO) is disabled until the deadtime expires. The upper gate
is enabled after the TIMER delay (t
+T
) , and the upper
MOSFET turns-on. The additional delay of the timer pre-
vents lower and upper MOSFETs from conducting simulta-
neously, thereby preventing shoot-through.
A falling transition on the PWM signal (IN) initiates the turn-
off of the upper MOSFET and turn-on of the lower MOSFET.
A short propagation delay (t
) is encountered before the
upper gate voltage begins to fall. Again, the adaptive shoot-
through circuitry and the programmable deadtime TIMER
delays the lower gate turn-on time. The upper MOSFET gate
voltage is monitored and the deadtime delay generator is
triggered when the upper MOSFET gate voltage with respect
to ground drops below an internally set threshold (
≈
Vdd/2).
The lower gate drive is momentarily disabled by the timer
and turns on the lower MOSFET after the deadtime delay
expires (t
P
+T
RT
).
20089005
FIGURE 3. Application Timing Waveforms
L
www.national.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5104SD/NOPB | 功能描述:功率驅(qū)動(dòng)器IC High Vltg Half- Bridge Gate Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5104SD/NOPB | 制造商:Texas Instruments 功能描述:MOSFET Driver |
| LM5104SDX | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5104SDX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5105 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:100V Half Bridge Gate Driver with Programmable Dead-time |
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