Electrical Characteristics V
DD
= 3V
(Notes 1, 2)
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for T
A
=
25C. (Continued)
Symbol
Parameter
Conditions
LM4990
Units
(Limits)
Typical
(Note 6)
425
600
75
0.1
62 (f =
217Hz)
68 (f = 1kHz)
Limit
(Notes 7, 9)
P
o
Output Power (8
)
THD+N = 1% (max); f = 1kHz
THD+N = 1% (max); f = 1kHz
mW
mW
ms
%
(4
)
T
WU
THD+N+N Total Harmonic Distortion+Noise
Wake-up time
P
o
= 0.25Wrms; f = 1kHz
V
ripple
= 200mV sine p-p
Input terminated with 10
PSRR
Power Supply Rejection Ratio
55
dB (min)
Electrical Characteristics V
DD
= 2.6V
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for T
A
= 25C.
(Notes 1, 2)
Symbol
Parameter
Conditions
LM4990
Units
(Limits)
Typical
(Note 6)
2.0
3.0
0.1
1.0
0.9
1.2
1.0
5
Limit
(Notes 7, 9)
I
DD
Quiescent Power Supply Current
V
IN
= 0V, I
o
= 0A, No Load
V
IN
= 0V, I
o
= 0A, 8
Load
V
SD
= V
SD Mode
(Note 8)
V
SD MODE
= V
DD
V
SD MODE
= V
DD
V
SD MODE
= GND
V
SD MODE
= GND
mA
mA
μA
V
V
V
V
I
SD
V
SDIH
V
SDIL
V
SDIH
V
SDIL
V
OS
R
OUT
Shutdown Current
Shutdown Voltage Input High
Shutdown Voltage Input Low
Shutdown Voltage Input High
Shutdown Voltage Input Low
Output Offset Voltage
50
9.7
7.0
mV (max)
k
(max)
k
(min)
Resistor Output to GND (Note 10)
8.5
P
o
Output Power ( 8
)
THD+N = 1% (max); f = 1kHz
THD+N = 1% (max); f = 1kHz
300
400
70
0.1
mW
( 4
)
T
WU
THD+N+N Total Harmonic Distortion+Noise
Wake-up time
ms
%
P
o
= 0.15Wrms; f = 1kHz
V
ripple
= 200mV sine p-p
Input terminated with 10
PSRR
Power Supply Rejection Ratio
51 (f =
217Hz)
51 (f = 1kHz)
dB
Note 1:
All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2:
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur.
Operating Ratings
indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Electrical Characteristics
state DC andAC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
,
θ
, and the ambient temperature T
. The maximum
allowable power dissipation is P
DMAX
= (T
JMAX
–T
A
)/
θ
JA
or the number given inAbsolute Maximum Ratings, whichever is lower. For the LM4990, see power derating
curves for additional information.
Note 4:
Human body model, 100pF discharged through a 1.5k
resistor.
Note 5:
Machine Model, 220pF – 240pF discharged through all pins.
Note 6:
Typicals are measured at 25C and represent the parametric norm.
Note 7:
Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8:
For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase I
SD
by a maximum of 2μA.
Note 9:
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 10:
R
ROUT
is measured from the output pin to ground. This value represents the parallel combination of the 10k
output resistors and the two 20k
resistors.
Note 11:
If the product is in Shutdown mode and V
DD
exceeds 6V (to a max of 8V V
DD
), then most of the excess current will flow through the ESD protection circuits.
If the source impedance limits the current to a max of 10mA, then the device will be protected. If the device is enabled when V
DD
is greater than 5.5V and less than
6.5V, no damage will occur, although operation life will be reduced. Operation above 6.5V with no current limit will result in permanent damage.
Note 12:
Maximum power dissipation in the device (P
DMAX
) occurs at an output power level significantly below full output power. P
DMAX
can be calculated using
Equation 1 shown in the
Application Information
section. It may also be obtained from the power dissipation graphs.
L
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