參數(shù)資料
型號： LM494
廠商： National Semiconductor Corporation
英文描述： Pulse Width Modulated Control Circuit
中文描述： 脈寬調(diào)制控制電路
文件頁數(shù)： 3/8頁
文件大?。?/td> 159K
代理商： LM494
LM494
Electrical Characteristics
T
A
e
0
§
C to
a
70
§
C for the LM494C, T
A
e b
40
§
C to
a
85
§
C for the LM494I,
V
CC
e
15V, f
OSC
e
10 kHz, unless otherwise specified (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
PWM COMPARATOR SECTION(Figure 9)
V
THI
I
O
b
Inhibit Threshold Voltage
Zero Duty Cycle
4.0
4.5
V
Output Sink Current
(Note 4)
0.5V
s
V
3
s
3.5V
b
0.2
b
0.6
mA
I
O
a
Output Source Current
(Note 4)
0.5V
s
V
3
s
3.5V
2.0
mA
OUTPUT SECTION
V
CE(sat)
Output Saturation
Voltage Common Emitter
Configuration(Figure 3)
V
E
e
0V,
I
C
e
200 mA
0
§
C
s
T
A
s
a
70
§
C
b
40
§
C
s
T
A
s
a
85
§
C
1.1
1.3
V
Emitter Follower
Configuration(Figure 4)
V
C
e
15V, I
E
e
200 mA
1.5
2.5
I
C(off)
Collector Off-State Current
V
CC
e
40V, V
CE
e
40V
2.0
100
m
A
I
E(off)
Emitter Off-State Current
V
CC
e
V
C
e
40V,
V
E
e
0
0
§
C
s
T
A
s
a
70
§
C,
b
40
§
C
s
T
A
s
a
85
§
C
b
100
m
A
OUTPUT CONTROL(Figure 6)
V
OCL
Output Control Voltage
Required for Single Ended or
Parallel Output Operation
0.4
V
V
OCH
Output Control Voltage
Required for Push-Pull
Operation
2.4
V
TOTAL DEVICE
I
CC
OUTPUT AC CHARACTERISTICS
Use Recommended Operating Conditions with T
A
e
25
§
C
Standby Power Supply Current
6.0
10
mA
t
r
Rise Time of Output Voltage
Common Emitter Configuration
(Figure 3)
100
200
ns
Emitter Follower Configuration
(Figure 4)
100
200
t
f
Fall Time of Output Voltage
Common Emitter Configuration
(Figure 3)
25
100
ns
Emitter Follower Configuration
(Figure 4)
40
100
Note 1:
T
J Max
e
150
§
C for the Molded DIP, and 175
§
C for the Ceramic DIP.
Note 2:
Ratings apply to ambient temperature at 25
§
C. Above this temperature, derate the 16L-Ceramic DIP at 10 mW/
§
C, and the 16L-Molded DIP at 8.3 mW/
§
C.
Note 3:
Selected devices with tightened tolerance reference voltage available.
Note 4:
These limits apply when the voltage measured at Lead 3 is within the range specified.
3
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