參數(shù)資料
型號(hào): LM4915
廠商: National Semiconductor Corporation
英文描述: Pseudo-Differential Mono Headphone Amplifier with Fixed 6dB Gain
中文描述: 偽差分單聲道耳機(jī)放大器,具有固定6dB增益
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 516K
代理商: LM4915
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation (Note 3)
ESD Susceptibility (Note 4)
ESD Susceptibility (Note 5)
6.0V
65C to +150C
-0.3V to V
DD
+ 0.3V
Internally Limited
2000V
200V
Junction Temperature
Thermal Resistance
θ
JC
(LQ)
θ
JA
(LQ)
150C
57C/W
140C/W
Operating Ratings
Temperature Range
T
MIN
T
A
T
MAX
Supply Voltage (V
DD
)
40C
T
A
+85C
2.2V
V
CC
5.5V
Electrical Characteristics V
DD
= 5V
(Notes 1, 2, 8)
The following specifications apply for V
DD
= 5V, R
L
= 16
unless otherwise specified. Limits apply to T
A
= 25C.
Symbol
Parameter
Conditions
LM4915
Units
(Limits)
Typ
(Note 6)
2
0.1
1.8
0.4
Limit
(Note 7)
3.5
Note 9
I
DD
I
SD
V
SDIH
V
SDIL
P
O
Quiescent Power Supply Current
Shutdown Current
Shutdown Voltage Input High
Shutdown Voltage Input Low
Output Power
V
IN
= 0V, I
O
= 0A
V
SHUTDOWN
= GND
mA (max)
μA(max)
V
V
THD = 1% (max); f = 1kHz
R
L
= 16
R
L
= 32
BW = 20Hz to 20kHz, A-weighted
V
RIPPLE
= 200mV sine p-p
V
IN
= 0V
400
280
375
250
mW
V
NO
PSRR
V
OS
Output Noise Voltage
Power Supply Rejection Ratio
Output Offset Voltage
20
75
2
μV
dB
20
mV (max)
Electrical Characteristics V
DD
= 3.0V
(Notes 1, 2, 8)
The following specifications apply for V
DD
= 3.0V, R
L
= 16
unless otherwise specified. Limits apply to T
A
= 25C.
Symbol
Parameter
Conditions
LM4915
Units
(Limits)
Typ
(Note 6)
1.5
0.1
1.8
0.4
Limit
(Note 7)
2.5
Note 9
I
DD
I
SD
V
SDIH
V
SDIL
P
O
Quiescent Power Supply Current
Shutdown Current
Shutdown Voltage Input High
Shutdown Voltage Input Low
Output Power
V
IN
= 0V, I
O
= 0A
V
SHUTDOWN
= GND
mA (max)
μA(max)
V
V
THD = 1% (max); f = 1kHz
R
L
= 16
R
L
= 32
BW = 20Hz to 20kHz, A-weighted
V
RIPPLE
= 200mV sine p-p
V
IN
= 0V
125
90
100
80
mW (min)
V
NO
PSRR
V
OS
Output Noise Voltage
Power Supply Rejection Ratio
Output Offset Voltage
20
70
2
μV
dB
20
mV (max)
Note 1:
All voltages are measured with respect to the GND pin unless otherwise specified.
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
JMAX
,
θ
JA
, and the ambient temperature, T
A
. The maximum
allowable power dissipation is P
DMAX
= (T
JMAX
- T
A
)/
θ
JA
or the number given inAbsolute Maximum Ratings, whichever is lower. For the LM4915, see power derating
curves for more information.
Note 4:
Human body model, 100pF discharged through a 1.5k
resistor.
Note 5:
Machine Model, 220pF-240pF discharged through all pins.
Note 6:
Typicals are measured at 25C and represent the parametric norm.
Note 7:
Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8:
Datasheet min/max specifications are guaranteed by design, test, or statistical analysis.
L
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