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參數(shù)資料
| 型號： | LM4050AIM3-10 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Precision Micropower Shunt Voltage Reference |
| 中文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 10 V, PDSO3 |
| 封裝： | 3 X 1.30 MM, PLASTIC, TO-236-AB, SOT-23, 3 PIN |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 233K |
| 代理商： | LM4050AIM3-10 |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Power Dissipation (T
A
= 25C) (Note 3)
M3 Package
Storage Temperature (Note 2)
Lead Temperature
M3 Package
Vapor phase (60 seconds)
Infrared (15 seconds)
ESD Susceptibility
Human Body Model (Note 4)
20 mA
10 mA
280 mW
65C to +150C
+215C
+220C
2 kV
Machine Model (Note 4)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
200V
Operating Ratings
(Notes 1, 3)
Temperature Range
Industrial Temperature Range
Extended temperature Range
Reverse Current
LM4050-2.5
LM4050-4.1
LM4050-5.0
LM4050-8.2
LM4050-10.0
(T
min
≤
T
A
≤
T
max
)
40C
≤
T
A
≤
+85C
40C
≤
T
A
≤
+125C
60 μA to 15 mA
68 μA to 15 mA
74 μA to 15 mA
91 μA to 15 mA
100 μA to 15 mA
LM4050-2.5
Electrical Characteristics
Boldface limits apply for T
= T
= T
MIN
to T
MAX
;
all other limits T
= T
= 25C. The grades A, B and C designate initial Re-
verse Breakdown Voltage tolerances of
0.1%,
0.2%, and 0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 5)
LM4050AIM3
Limits
(Note 6)
LM4050BIM3
Limits
(Note 6)
LM4050CIM3
LM4050CEM3
Limits
(Note 6)
Units
(Limit)
V
R
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage Tolerance (Note 7)
I
R
= 100 μA
2.500
V
I
R
= 100 μA
Industrial Temp. Range
Devices
Extended Temp. Range
Devices
±
2.5
±
5.0
±
13
mV (max)
±
11
±
14
±
21
mV (max)
±
25
mV (max)
μA
μA (max)
μA (max)
ppm/C
I
RMIN
Minimum Operating Current
41
60
65
60
65
60
65
V
R
/
T Average Reverse
Breakdown Voltage
Temperature Coefficient
(Note 7)
V
R
/
I
R
Reverse Breakdown
Voltage Change with
Operating Current Change
(Note 8)
I
R
= 10 mA
±
20
±
15
±
15
I
R
= 1 mA
ppm/C
I
R
= 100 μA
I
RMIN
≤
I
R
≤
1 mA
±
50
±
50
±
50
ppm/C (max)
0.3
mV
0.8
0.8
0.8
mV (max)
1.2
1.2
1.2
mV (max)
1 mA
≤
I
R
≤
15 mA
2.3
mV
6.0
8.0
6.0
8.0
6.0
8.0
mV (max)
mV (max)
Z
R
Reverse Dynamic
Impedance
I
R
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
R
0.3
e
N
Wideband Noise
I
R
= 100 μA
10 Hz
≤
f
≤
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 100 μA
T = 40C to 125C
41
μV
rms
V
R
Reverse Breakdown
Voltage Long Term Stability
120
ppm
V
HYST
Output Hysteresis
0.7
mV
L
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