參數(shù)資料
型號(hào): LM4041AIM3-1.2
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Precision Micropower Shunt Voltage Reference
中文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.225 V, PDSO3
封裝: PLASTIC, TO-236AB, SOT-23, 3 PIN
文件頁數(shù): 3/19頁
文件大小: 343K
代理商: LM4041AIM3-1.2
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Maximum Output Voltage
(LM4041-ADJ)
Power Dissipation (T
A
= 25C) (Note 2)
M3 Package
Z Package
M7 Package
Storage Temperature
Lead Temperature
M3 Packages
Vapor phase (60 seconds)
Infrared (15 seconds)
Z Package
20 mA
10 mA
15V
306 mW
550 mW
241mW
65C to +150C
+215C
+220C
Soldering (10 seconds)
ESD Susceptibility
Human Body Model (Note 3)
Machine Model (Note 3)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
+260C
2 kV
200V
Operating Ratings
(Notes 1, 2)
Temperature Range
Industrial Temperature Range
Extended Temperature Range
Reverse Current
LM4041-1.2
LM4041-ADJ
Output Voltage Range
LM4041-ADJ
(T
min
T
A
T
max
)
40C
T
A
+85C
40C
T
A
+125C
60 μA to 12 mA
60 μA to 12 mA
1.24V to 10V
LM4041-1.2
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for T
= T
= T
MIN
to T
;
all other limits T
= T
J
= 25C. The grades A and B designate initial Re-
verse Breakdown Voltage tolerances of
0.1% and
±
0.2%, respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4041AIM3
LM4041AIZ
Limits
(Note 5)
LM4041BIM3
LM4041BIZ
LM4041BIM7
Limits
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Tolerance (Note 6)
Minimum Operating Current
I
R
= 100 μA
I
R
= 100 μA
1.225
V
±
1.2
±
9.2
±
2.4
±
10.4
mV (max)
mV (max)
μA
μA (max)
μA (max)
ppm/C
ppm/C (max)
ppm/C
mV
mV (max)
mV (max)
mV
mV (max)
mV (max)
(max)
μV
rms
I
RMIN
45
60
65
60
65
V
R
/
T
Average Reverse Breakdown
Voltage Temperature
Coefficient (Note 6)
I
R
= 10 mA
I
R
= 1 mA
I
R
= 100 μA
I
RMIN
I
R
1 mA
±
20
±
15
±
15
0.7
±
100
±
100
V
R
/
I
R
Reverse Breakdown Voltage
Change with Operating
Current Change
1.5
2.0
1.5
2.0
1 mA
I
R
12 mA
4.0
6.0
8.0
6.0
8.0
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
R
I
R
= 100 μA
10 Hz
f
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 100 μA
0.5
1.5
1.5
e
N
Wideband Noise
20
V
R
Reverse Breakdown Voltage
Long Term Stability
120
ppm
L
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