參數(shù)資料
型號: LM4040CIZ-4.1
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 基準電壓源/電流源
英文描述: 16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 4.096 V, PBCY3
封裝: PLASTIC, TO-92, 3 PIN
文件頁數(shù): 18/39頁
文件大?。?/td> 482K
代理商: LM4040CIZ-4.1
www.ti.com
LM4040x41I Electrical Characteristics
at industrial temperature range, full-range T
A
= –40
°
C to 85
°
C (unless otherwise noted)
V
Z
I
Z
LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE
SLOS456I–JANUARY 2005–REVISED DECEMBER 2005
LM4040C41I
MIN
4.096
–20
–47
LM4040D41I
MIN
4.096
–41
–81
PARAMETER
TEST CONDITIONS
T
A
UNIT
TYP
MAX
TYP
MAX
V
Z
Reverse breakdown voltage
I
Z
= 100
μ
A
25
°
C
25
°
C
V
20
47
83
88
41
81
83
88
Reverse breakdown voltage
tolerance
V
Z
I
Z
= 100
μ
A
mV
Full range
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
25
°
C
Full range
25
°
C
Full range
50
50
I
Z,min
Minimum cathode current
μ
A
I
Z
= 10 mA
±
30
±
20
±
30
±
20
Average temperature coefficient
of reverse breakdown voltage
α
VZ
I
Z
= 1 mA
ppm/
°
C
±
100
±
150
I
Z
= 100
μ
A
±
20
0.5
±
20
0.5
0.9
1.2
1.2
1.5
I
Z,min
< I
Z
< 1 mA
Reverse breakdown voltage
change with cathode current
change
mV
3
7
3
9
1 mA < I
Z
< 15 mA
10
13
I
Z
= 1 mA, f = 120 Hz,
I
AC
= 0.1 I
Z
I
= 100
μ
A,
10 Hz
f
10 kHz
t = 1000 h,
T
A
= 25
°
C
±
0.1
°
C,
I
Z
= 100
μ
A
T
A
= –40
°
C to 125
°
C
Z
Z
Reverse dynamic impedance
25
°
C
0.5
1
0.5
1.3
e
N
Wideband noise
25
°
C
80
80
μ
V
RMS
Long-term stability of reverse
breakdown voltage
120
120
ppm
V
HYST
Thermal hysteresis
(1)
0.08
0.08
%
(1)
Thermal hysteresis is defined as V
Z,25
°
C
(after cycling to –40
°
C) – V
Z,25
°
C
(after cycling to 125
°
C).
18
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