參數(shù)資料
型號(hào): LM330T-5.0
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 3-Terminal Positive Regulator
中文描述: 5 V FIXED POSITIVE LDO REGULATOR, 0.6 V DROPOUT, PSFM3
封裝: PLASTIC, TO-220, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 254K
代理商: LM330T-5.0
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Input Voltage
Operating Range
Line Transient Protection (1000 ms)
26V
40V
Internal Power Dissipation
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
(Soldering, 10 sec.)
Internally Limited
0C to +70C
+125C
65C to +150C
+300C
Electrical Characteristics
(Note 2)
Symbol
V
o
Parameter
Conditions
Min
4.8
4.75
Typ
5
Max
5.2
5.25
Units
Output Voltage
Output Voltage
Over Temp
Line Regulation
T
j
= 25C
5
<
I
o
<
150 mA
6
<
V
IN
<
26V; 0C
T
j
100C
9
<
V
IN
<
16V, I
o
= 5 mA
6
<
V
IN
<
26V, I
o
= 5 mA
5
<
I
o
<
150 mA
V
V
o
7
25
60
50
30
14
20
3.5
5
18
14
80
10
mV
Load Regulation
Long Term Stability
Quiescent Current
mV/1000 hrs
I
Q
I
o
= 10 mA
I
o
= 50 mA
I
o
= 150 mA
V
IN
= 40V, R
L
= 100
, 1s
V
IN
= 6V, R
L
= 100
6
<
V
IN
<
26V
7
11
40
mA
Line Transient
Reverse Polarity
Quiescent Current
Change
Overvoltage Shutdown
Voltage
Max Line Transient
I
Q
%
V
IN
26
38
60
50
30
12
50
200
56
400
0.32
4
50
V
1s, V
o
5.5V
Reverse Polarity
Input Voltage
Output Noise Voltage
Output Impedance
Ripple Rejection
Current Limit
Dropout Voltage
Thermal Resistance
DC V
o
>
0.3V, R
L
= 100
10 Hz–100 kHz
I
o
= 100 mADC + 10 mArms
μV
m
dB
mA
V
C/W
150
700
0.6
I
o
= 150 mA
Junction to Case
Junction to Ambient
Note 1:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2:
Unless otherwise specified: V
IN
= 14V, I
= 150 mA, T
= 25C, C1 = 0.1 μF, C2 = 10 μF. All characteristics except noise voltage and ripple rejection are
measured using pulse techniques (t
W
10 ms, duty cycle
5%). Output voltage changes due to changes in internal temperature must be taken into account sepa-
rately.
www.national.com
2
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