參數(shù)資料
型號(hào): LM3208TLX
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類(lèi): 穩(wěn)壓器
英文描述: 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
中文描述: 1.2 A SWITCHING REGULATOR, 2200 kHz SWITCHING FREQ-MAX, PBGA8
封裝: ROHS COMPLIANT, THIN MICRO SMD, 8 PIN
文件頁(yè)數(shù): 3/17頁(yè)
文件大?。?/td> 1651K
代理商: LM3208TLX
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
, PV
IN
to SGND
PGND to SGND
EN, FB, V
CON
0.2V to +6.0V
0.2V to +0.2V
(SGND 0.2V)
to (V
DD
+0.2V)
w/6.0V max
(PGND 0.2V)
to (PV
IN
+0.2V)
w/6.0V max
0.2V to +0.2V
SW
PV
IN
to V
DD
Continuous Power Dissipation
(Note 3)
Junction Temperature (T
J-MAX
)
Storage Temperature Range
Maximum Lead Temperature
(Soldering, 10 sec)
Internally Limited
+150C
65C to +150C
+260C
ESD Rating (Notes 4, 13)
Human Body Model:
Machine Model:
2kV
200V
Operating Ratings
(Notes 1, 2)
Input Voltage Range
Recommended Load Current
Junction Temperature (T
J
) Range
Ambient Temperature (T
A
) Range
(Note 5)
2.7V to 5.5V
0mA to 650mA
30C to +125C
30C to +85C
Thermal Properties
Junction-to-Ambient Thermal
Resistance (
θ
JA
), TLA08 Package
(Note 6)
100C/W
Electrical Characteristics
(Notes 2, 7, 8)
face
type apply over the full operating ambient temperature range (30C
T
A
= T
J
+85C). Unless otherwise noted, all
specifications apply to the LM3208 with: PV
IN
= V
DD
= EN = 3.6V.
Limits in standard typeface are for T
A
= T
J
= 25C. Limits in
bold-
Symbol
V
FB, MIN
Parameter
Conditions
Min
Typ
Max
Units
Feedback Voltage at minimum
setting
V
FB, MAX
Feedback Voltage at maximum
setting
I
SHDN
Shutdown supply current
V
CON
= 0.32V(Note 8)
0.75
0.80
0.85
V
V
CON
= 1.44V, V
IN
= 4.2V(Note 8)
3.537
3.600
3.683
V
EN = SW = V
CON
= 0V,
(Note 9)
V
CON
= 0V, FB = 0V,
No Switching (Note 10)
I
SW
= 200mA, V
CON
= 0.5V
0.01
2
μA
I
Q
DC bias current into V
DD
0.6
0.7
mA
R
DSON(P)
Pin-pin resistance for Large
PFET
R
DSON(P)
Pin-pin resistance for Small
PFET
R
DSON(N)
Pin-pin resistance for NFET
140
180
210
m
I
SW
= 200mA, V
CON
= 0.32V
960
m
I
SW
= -200mA, V
CON
= 0.5V
300
375
450
m
I
LIM
(L_PFET)
I
LIM
(S_PFET)
F
OSC
V
IH,EN
V
IL,EN
I
PIN,EN
V
CON,ON
V
CON
Threshold for turning on
switches
I
CON
V
CON
pin leakage current
Gain
V
CON
to V
OUT
Gain
Large PFET (L) Switch peak
current limit
Small PFET (S) Switch peak
current limit
Internal oscillator frequency
Logic high input threshold
Logic low input threshold
EN pin pull down current
V
CON
= 0.5V (Note 11)
985
1100
1200
mA
V
CON
= 0.32V (Note 11)
650
800
900
mA
1.8
1.2
2.0
2.2
MHz
V
V
μA
0.5
10
5
0.15
V
V
CON
= 1.0V
0.32V
V
CON
1.44V
±
1
μA
V/V
2.5
L
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