參數(shù)資料
型號(hào)： LM3208TL
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類(lèi)： 穩(wěn)壓器
英文描述： 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
中文描述： 1.2 A SWITCHING REGULATOR, 2200 kHz SWITCHING FREQ-MAX, PBGA8
封裝： ROHS COMPLIANT, THIN MICRO SMD, 8 PIN
文件頁(yè)數(shù)： 4/17頁(yè)
文件大?。?/td> 1651K
代理商： LM3208TL
System Characteristics
values in the typical application circuit are used (L = 3.0μH, DCR = 0.12
, FDK MIPW3226D3R0M; C
= 10μF, 6.3V, 0805,
TDK C2012X5R0J106K; C
OUT
= 4.7μF, 6.3V, 0603, TDK C1608X5R0J475M).
These parameters are not guaranteed by
production testing.
Min and Max values are specified over the ambient temperature range T
A
= 30C to 85C. Typical val-
ues are specified at PV
IN
= V
DD
= EN = 3.6V and T
A
= 25C unless otherwise specified.
The following spec table entries are guaranteed by design providing the component
Symbol
T
RESPONSE
Parameter
Conditions
Min
Typ
Max
Units
Time for V
OUT
to rise from 0.8V
to 3.4V (to reach 3.35V)
Time for V
OUT
to fall from 3.4V
to 0.8V
V
CON
input capacitance
V
IN
= 4.2V, R
LOAD
= 5.5
25
40
μs
V
IN
= 4.2V, R
LOAD
= 15
35
45
μs
C
CON
V
CON
= 1V, V
IN
=2.7V to 5.5V,
Test frequency = 100kHz
EN = 2V, V
IN
= 2.7V to 5.5V,
Test frequency = 100kHz
Threshold for PFET R
DSON(P)
to change
from 960m
to 140m
Threshold for PFET R
DSON(P)
to change
from 140m
to 960m
V
IN
= 2.7V to 5.5V, V
CON
= 0.45V to
1.44V, L = MIPW3226D3R0
V
IN
= 2.7V to 5.5V, V
CON
= 0.32V to
0.45V, L = MIPW3226D3R0
V
IN
= 3.9V (Note 14)
Monotonic in nature
5
10
pF
C
EN
EN input capacitance
5
10
pF
V
CON
(S
L)
V
CON
(L
S)
I
OUT, MAX
R
DSON(P)
management
threshold
R
DSON(P)
management
threshold
Maximum Output Current
0.39
0.42
0.45
V
0.37
0.40
0.43
V
650
mA
400
mA
Linearity
Linearity in control range 0.32V
to 1.44V
3
50
+3
+50
%
mV
T
ON
Turn on time
(time for output to reach 97% of
final value after Enable low to
high transition)
Efficiency
EN = Low to High, V
IN
= 4.2V, V
OUT
=
3.4V,
I
OUT
≤
1mA
40
60
μs
η
V
IN
= 3.6V, V
OUT
= 0.8V, I
OUT
= 90mA
V
IN
= 3.6V, V
OUT
= 1.5V, I
OUT
= 150mA
V
IN
= 3.9V, V
OUT
= 3.4V, I
OUT
= 400mA
V
IN
= 2.7V to 4.5V, V
OUT
= 0.8V to 3.4V,
Differential voltage = V
IN
- V
OUT
>
1V,
I
OUT
= 0mA to 400mA (Note 12)
V
IN
= 5.5V to dropout, V
OUT
= 3.4V,
I
OUT
= 650mA (Note 12)
V
IN
= 3.6V to 4.2V,
T
R
= T
F
= 10μs,
V
OUT
= 0.8V, I
OUT
= 100mA
V
IN
= 3.1/3.6/4.5V, V
OUT
= 0.8V,
I
OUT
= 50mA to 150mA
81
89
95
%
%
%
V
OUT
_ripple Ripple voltage at
no pulse skip condition
10
mVp-p
Ripple voltage at
pulse skip condition
Line transient response
60
mVp-p
Line_tr
50
mVpk
Load_tr
Load transient response
50
mVpk
Max Duty
cycle
Maximum duty cycle
100
%
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2:
All voltages are with respect to the potential at the GND pins. The LM3208 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry.
Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3:
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
J
= 150C (typ.) and disengages at T
J
=
125C (typ.).
Note 4:
The Human body model is a 100pF capacitor discharged through a 1.5k
resistor into each pin. (MIL-STD-883 3015.7) The machine model is a 200pF
capacitor discharged directly into each pin.
Note 5:
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
de-rated. Maximum ambient temperature (T
A-MAX
) is dependent on the maximum operating junction temperature (T
J-MAX-OP
= 125C), the maximum power
dissipation of the device in the application (P
D-MAX
), and the junction-to ambient thermal resistance of the part/package in the application (
θ
JA
), as given by the
following equation: T
A-MAX
= T
J-MAX-OP
– (
θ
JA
x P
D-MAX
).
L
www.national.com
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