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參數(shù)資料
| 型號： | LM3207TLX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| 中文描述： | 1.2 A SWITCHING REGULATOR, 2300 kHz SWITCHING FREQ-MAX, BGA9 |
| 封裝： | MICRO SMD, 9 PIN |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | LM3207TLX |
Note 5:
Junction-to-ambient thermal resistance (
θ
JA
) is taken from thermal measurements, performed under the conditions and guidelines set forth in the JEDEC
standard JESD51-7.
Note 6:
Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Due
to the pulsed nature of the testing T
A
= T
J
for the electrical characteristics table.
Note 7:
The parameters in the electrical characteristics table are tested under open loop conditions at PV
IN
= 3.6V. For performance over the input voltage range
and closed loop results refer to the datasheet curves.
Note 8:
Shutdown current includes leakage current of PFET.
Note 9:
I
Q
specified here is when the part is operating at 100% duty cycle.
Note 10:
Current limit is built-in, fixed, and not adjustable. Refer to datasheet curves for closed loop data and its variation with regards to supply voltage and
temperature. Electrical Characteristic table reflects open loop data (FB = 0V and current drawn from SW pin ramped up until cycle by cycle limit is activated). Closed
loop current limit is the peak inductor current measured in the application circuit by increasing output current until output voltage drops by 10%.
Note 11:
Ripple voltage should measured at C
OUT
electrode on good layout PC board and under condition using suggested inductors and capacitors.
Note 12:
Transient Pull-up current (I
PUT
) and Transient Pull-down Current (I
PDT
) will be tested which are inversely proportional to charge and discharge times t
LDO,
ON
and t
LDO, OFF
respectively.
Note 13:
Dropout voltage is the voltage difference between the input and the output at which the output voltage drops to 100 mV below its nominal value.
Typical Performance Characteristics
PV
IN
= EN = 3.6V, L = 3.0μH, (DCR = 0.12
, FDK MIPW3226D3R0M); C
= 10μF, (6.3V, 0805, TDK C2012X5R0J106K);
C
= 4.7μF, (6.3V, 0603, TDK C1608X5R0J475M), C
LDO
= 100nF, 10V, (0402, TDK C1005X5R1A104KT) (or 220nF,
(6.3V, 0402, TDK C1005X5R0J224KT)) can be used. T
A
(Circuit in
Figure 3
, See Operation Description Section),
LDO Typical Performance Curves
LDO Voltage vs Load Current
(C
LDO
= 100nF)
LDO Dropout Voltage vs Load Current
(C
LDO
= 100nF),
(Note 13)
20165378
20165330
LDO Short Circuit Current vs Voltage
(V
IN
= 3.0V, C
LDO
= 100nF)
LDO Output Noise Density
(I
LOAD
= 1mA, C
LDO
= 100nF and 220nF)
20165360
20165380
L
www.national.com
6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM3207TLX/NOPB | 功能描述:DC/DC 開關(guān)控制器 RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| LM3207TLX-2.53 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO |
| LM3207TLX-2.53/NOPB | 功能描述:DC/DC 開關(guān)控制器 RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| LM3208 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers |
| LM3208TL | 制造商:Texas Instruments 功能描述:Conv DC-DC Single Step Down 2.7V to 5.5V 8-Pin uSMD T/R 制造商:Texas Instruments 功能描述:IC, BUCK, 650MA, RF PWR AMP, 8USMD |
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