參數(shù)資料
型號: LM3207TL
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 穩(wěn)壓器
英文描述: 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers with Integrated Vref LDO
中文描述: 1.2 A SWITCHING REGULATOR, 2300 kHz SWITCHING FREQ-MAX, BGA9
封裝: MICRO SMD, 9 PIN
文件頁數(shù): 5/19頁
文件大?。?/td> 1335K
代理商: LM3207TL
System Characteristics
values in the typical application circuit are used (L = 3.0μH, (DCR = 0.12
, FDK MIPW3226D3R0M);
C
IN
= 10μF, (6.3V, 0805, TDK C2012X5R0J106K); C
OUT
= 4.7μF, (6.3V, 0603, TDK C1608X5R0J475M); C
= 100nF,
(10V, 0402, TDK C1005X5R1A104KT) (or 220nF, (6.3V, 0402, TDK C1005X5R0J224KT))) .
These parameters are not
guaranteed by production testing.
Min and Max values are specified over the V
IN
range = 2.7V to 5.5V and over the ambi-
ent temp range T
A
= 30C to 85C unless otherwise specified. Typical values are specified at PV
IN
= EN = 3.6V and T
A
=
25C unless otherwise specified.
The following spec table entries are guaranteed by design providing the component
Symbol
LDO
PSRR
Parameter
Conditions
Min
Typ
Max
Units
Power Supply Rejection
Ratio
Output Noise Voltage
Time to reach 90% of
V
LDO(
nom)
after EN
LDO
signal goes high.
Offset Freq = 1Khz, C
out
= 100nF,
I
out
= 1mA, PV
in
= Vout
(nom)
+ 0.5V
BW = 10Hz to 100Khz, I
out
= 1mA
C
LDO
= 100nF, PWM mode assumed to
be fully functional before EN
LDO
goes
high. PV
in
= 3V, Iout = 5 mA (Note 12)
C
LDO
= 220nF, PWM mode assumed to
be fully functional before EN
LDO
goes
high. PV
in
= 3V, Iout = 5 mA (Note 12)
C
LDO
= 100nF, PV
in
= 3V, Iout = 0mA
(Note 12)
C
LDO
= 220nF, PV
in
= 3V, Iout = 0mA
(Note 12)
50
dB
V
LDO(NOISE)
t
LDO, ON
30
uVrms
3
uS
5
uS
t
LDO, OFF
Time to reach 10% of
V
LDO
(nom)
after EN
LDO
signal goes low.
3
uS
5
Switcher
T
RESPONSE
(Rise time)
T
RESPONSE
(Fall
time)
C
CON
Time for V
OUT
to rise
from 0.8V to 3.6V
Time for V
OUT
to fall
from 3.6V to 0.8V
V
CON
input capacitance
PV
IN
= 4.2V, C
OUT
= 4.7uF, L = 3.0uH,
R
LOAD
= 5.5
PV
IN
= 4.2V, C
OUT
= 4.7uF, L = 3.0uH,
R
LOAD
= 10
V
CON
= 1V,
Test frequency = 100 kHz
PV
IN
= 3.9V, Monotonic in nature
20
30
μs
20
30
μs
20
pF
V
CON
Linearity
Linearity in control
range 0.32V to 1.44V
Turn on time
(time for output to reach
3.6V from Enable low to
high transition)
Efficiency
(L = 3.0μH, DCR
100m
)
Ripple voltage, PWM
mode
Line transient response
-3
+3
%
T
_ON
EN = Low to High, PV
IN
= 4.2V,
V
O
= 3.6V, C
OUT
= 4.7μF,
I
OUT
1mA
70
100
μs
η
PV
IN
= 3.6V, V
OUT
= 0.8V, I
OUT
= 90mA
81
%
PV
IN
= 3.9V, V
OUT
= 3.4V, I
OUT
= 400mA
95
%
V
O_ripple
PV
IN
= 3V to 4.5V, V
OUT
= 0.8V,
I
OUT
= 10mA to 400mA, (Note 11)
PV
IN
= 600mV perturbance,
T
RISE
= T
FALL
= 10μs, V
OUT
= 0.8V,
I
OUT
= 100mA
10
mVp-p
Line_tr
50
mV
Load_tr
Load transient response PV
IN
= 3.1/3.6/4.5V, V
OUT
= 0.8V,
transients up to 100mA,
T
RISE
= T
FALL
= 10μs
50
mV
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2:
All voltages are with respect to the potential at the GND pins. The LM3207 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry.
Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3:
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
J
= 150C (typ.) and disengages at T
J
=
130C (typ.).
Note 4:
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
de-rated. Maximum ambient temperature (T
A-MAX
) is dependent on the maximum operating junction temperature (T
J-MAX-OP
= 125C), the maximum power
dissipation of the device in the application (P
D-MAX
), and the junction-to ambient thermal resistance of the part/package in the application (
θ
JA
), as given by the
following equation: T
A-MAX
= T
J-MAX-OP
– (
θ
JA
x P
D-MAX
).
L
www.national.com
5
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