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參數(shù)資料
| 型號： | LM3146M |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | LM3146 High Voltage Transistor Array |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 151K |
| 代理商： | LM3146M |
AC Electrical Characteristics
Symbol
Parameter
Conditions
Limits
Units
Min
Typ
Max
NF
Low Frequency Noise Figure
f
e
1 kHz, V
CE
e
5V,
I
C
e
100
m
A, R
S
e
1 k
X
3.25
dB
f
T
Gain Bandwidth Product
V
CE
e
5V, I
C
e
3 mA
300
500
MHz
C
EB
Emitter to Base Capacitance
V
EB
e
5V, I
E
e
0
0.70
pF
C
CB
Collector to Base Capacitance
V
CB
e
5V, I
C
e
0
0.37
pF
C
CI
Collector to Substrate Capacitance
V
CI
e
5V, I
C
e
0
2.2
pF
Low Frequency, Small Signal Equivalent Circuit Characteristics
h
fe
Forward Current Transfer Ratio
f
e
1 kHz, V
CE
e
3V, I
C
e
1 mA
100
h
ie
Short Circuit Input Impedance
f
e
1 kHz, V
CE
e
3V, I
C
e
1 mA
3.5
k
X
h
oe
Open Circuit Output Impedance
f
e
1 kHz, V
CE
e
3V, I
C
e
1 mA
15.6
m
mho
h
re
Open Circuit Reverse Voltage
Transfer Ratio
f
e
1 kHz, V
CE
e
3V,
I
C
e
1 mA
1.8 x 10
b
4
Admittance Characteristics
Y
fe
Forward Transfer Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
31
b
j 1.5
mmho
Y
ie
Input Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
0.3
a
j 0.04
mmho
Y
oe
Output Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
0.001
a
j 0.03
mmho
Y
re
Reverse Transfer Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
(Note 3)
mmho
Note 1:
The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors,
the substrate terminal should be maintained at either dc or signal (ac) ground. A suitable bypass capacitor can be used to establish a signal ground.
Note 2:
If the transistors are forced into zener breakdown (V
(BR)EBO
), degradation of forward transfer current ratio (h
FE
) can occur.
Note 3:
See curve.
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM3146N | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3146 High Voltage Transistor Array |
| LM3150 | 制造商:Texas Instruments 功能描述:REGULATOR ADJ. VOLTAGE 12A 14TSSOP |
| LM3150-250EVAL/NOPB | 功能描述:電源管理IC開發(fā)工具 LM3150-250 EVAL BOARD RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| LM3150-500EVAL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述: |
| LM3150-500EVAL/NOPB | 功能描述:電源管理IC開發(fā)工具 LM3150-500 EVAL BOARD RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
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