參數(shù)資料
型號(hào): LM312H
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 運(yùn)算放大器
英文描述: Operational Amplifiers
中文描述: OP-AMP, 7500 uV OFFSET-MAX, 1 MHz BAND WIDTH, MBCY8
文件頁數(shù): 2/6頁
文件大?。?/td> 200K
代理商: LM312H
Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the
National
Semiconductor
Sales
Office/Distributors
specifications.
(Note 5)
for
availability
and
LM112/LM212
g
20V
500 mW
LM312
g
18V
500 mW
Supply Voltage
Power Dissipation (Note 1)
Differential Input Current (Note 2)
g
10 mA
g
15V
Continuous
g
10 mA
g
15V
Continuous
Input Voltage (Note 3)
Output Short-Circuit Duration
Operating Temperature Range
LM112
LM212
b
55
§
C to
a
125
§
C
b
25
§
C to
a
85
§
C
b
65
§
C to
a
150
§
C
300
§
C
0
§
C to
a
70
§
C
Storage Temperature Range
b
65
§
C to
a
150
§
C
300
§
C
Lead Temperature (Soldering, 10 sec.)
ESD rating to be determined.
Electrical Characteristics
(Note 4)
Parameter
Conditions
LM112/LM212
LM312
Units
Min
Typ
Max
Min
Typ
Max
Input Offset Voltage
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C, V
S
e
g
15V
V
OUT
e
g
10V, R
L
t
10 k
X
0.7
2.0
2.0
7.5
mV
Input Offset Current
0.05
0.2
0.2
1
nA
Input Bias Current
0.8
2.0
1.5
7
nA
Input Resistance
30
70
10
40
M
X
Supply Current
0.3
0.6
0.3
0.8
mA
Large Signal Voltage Gain
50
300
25
300
V/mV
Input Offset Voltage
3.0
10
mV
Average Temperature
Coefficient of Input
Offset Voltage
3.0
15
6.0
30
m
V/
§
C
Input Offset Current
0.4
1.5
nA
Average Temperature
Coefficient of Input
Offset Current
0.5
2.5
2.0
10
pA/
§
C
Input Bias Current
3.0
10
nA
Supply Current
T
A
e
125
§
C
0.15
0.4
mA
Large Signal Voltage Gain
V
S
e
g
15V, V
OUT
e
g
10V
R
L
t
10 k
X
25
15
V/mV
Output Voltage Swing
V
S
e
g
15V, R
L
e
10 k
X
g
13
g
14
g
13
g
14
V
Input Voltage Range
V
S
e
g
15V
g
13.5
g
14
V
Common-Mode Rejection Ratio
85
100
80
100
dB
Supply Voltage Rejection Ratio
80
96
80
96
dB
Note 1:
The maximum junction temperature of the LM112 is 150
§
C, LM212 is 100
§
C and LM312 is 85
§
C. For operating at elevated temperatures, devices in the H08
package must be derated based on a thermal resistance of 160
§
C/W, junction to ambient, or 20
§
C/W, junction to case.
Note 2:
The inputs are shunted with shunt diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is
applied between the inputs unless some limiting resistance is used.
Note 3:
For supply voltages less than
g
15V, the absolute maximum input voltage is equal to the supply voltage.
Note 4:
These specifications apply for
g
5V
s
V
S
s g
20V and
b
55
§
C
s
T
A
s
a
125
§
C (LM112),
b
25
§
C
s
T
A
s
a
85
§
C (LM212),
g
5V
s
V
S
s g
15V and
0
§
C
s
T
A
s
a
70
§
C (LM312) unless otherwise noted.
Note 5:
Refer to RETS112X for LM112H military specifications.
2
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