![](http://datasheet.mmic.net.cn/230000/LM3086_datasheet_15592889/LM3086_1.png)
TL/H/7950
L
December 1994
LM3045/LM3046/LM3086 Transistor Arrays
General Description
The LM3045, LM3046 and LM3086 each consist of five
general purpose silicon NPN transistors on a common
monolithic substrate. Two of the transistors are internally
connected to form a differentially-connected pair. The tran-
sistors are well suited to a wide variety of applications in low
power system in the DC through VHF range. They may be
used as discrete transistors in conventional circuits howev-
er, in addition, they provide the very significant inherent inte-
grated circuit advantages of close electrical and thermal
matching. The LM3045 is supplied in a 14-lead cavity dual-
in-line package rated for operation over the full military tem-
perature range. The LM3046 and LM3086 are electrically
identical to the LM3045 but are supplied in a 14-lead mold-
ed dual-in-line package for applications requiring only a lim-
ited temperature range.
Features
Y
Two matched pairs of transistors
V
BE
matched
g
5 mV
Input offset current 2
m
A max at I
C
e
1 mA
Y
Five general purpose monolithic transistors
Y
Operation from DC to 120 MHz
Y
Wide operating current range
Y
Low noise figure
3.2 dB typ at 1 kHz
Y
Full military
temperature range (LM3045)
b
55
§
C to
a
125
§
C
Applications
Y
General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
Y
Custom designed differential amplifiers
Y
Temperature compensated amplifiers
Schematic and Connection Diagram
Dual-In-Line and Small Outline Packages
TL/H/7950–1
Top View
Order Number LM3045J, LM3046M, LM3046N or LM3086N
See NS Package Number J14A, M14A or N14A
C
1995 National Semiconductor Corporation
RRD-B30M115/Printed in U. S. A.