參數(shù)資料
型號(hào): LM258
廠商: NXP Semiconductors N.V.
英文描述: Low power dual operational amplifiers(低功耗雙運(yùn)算放大器)
中文描述: 低功耗雙運(yùn)算放大器(低功耗雙運(yùn)算放大器)
文件頁數(shù): 3/6頁
文件大小: 122K
代理商: LM258
Philips Semiconductors
Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1995 Nov 27
3
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C, V+=+5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE532, LM158/258
NE/SA532/
LM358/LM2904
Min
Typ
±
2
UNIT
Min
Typ
±
2
Max
±
5
±
7
Max
±
7
±
9
V
OS
Offset voltage
1
R
S
=0
R
S
=0
, over temp.
R
S
=0
, over temp.
I
IN
(+)-I
IN
(-)
Over temp.
Over temp.
I
IN
(+) or I
IN
(-)
Over temp., I
IN
(+) or I
IN
(-)
Over temp.
V+=30V
Over temp., V+=30V
mV
mV
μ
V/
°
C
nA
nA
pA/
°
C
nA
nA
pA/
°
C
V
V
V
OS
Drift
7
±
3
7
±
5
I
OS
Offset current
±
30
±
100
±
50
±
150
I
OS
Drift
10
45
40
50
10
45
40
50
I
BIAS
Input current
2
150
300
250
500
I
B
V
CM
Drift
Common-mode voltage
range
3
Common-mode rejection
ratio
0
0
V+-1.5
V+-2.0
0
0
V+-1.5
V+-2.0
CMRR
V+=30V
70
85
65
70
dB
V
OH
Output voltage swing
R
L
2k
, V+=30V,
over temp.
R
L
10k
, V+=30V,
over temp.
R
L
10k
, over temp.
R
L
=
, V+=30V
R
L
=
on all amplifiers,
over temp., V+ =30V
R
L
2k
, V
OUT
±
10V,
V+=15V
(for large V
O
swing)
over temp.
26
26
V
27
28
27
28
V
V
OL
Output voltage swing
5
20
5
20
mV
I
CC
Supply current
0.5
0.6
1.0
1.2
0.5
0.6
1.0
1.2
mA
mA
A
VOL
Large-signal voltage gain
50
25
100
25
15
100
V/mV
V/mV
PSRR
Supply voltage rejection
ratio
Amplifier-to-amplifier cou-
pling
4
Output current
Source
R
S
=0
65
100
65
100
dB
f=1kHz to 20kHz
(input referred)
V
IN+
=+1V
DC
, V
IN-
=0V
DC
,
V+=15V
DC
V
IN+
=+1V
DC
, V
IN-
=0V
DC
,
V+=15V
DC
, over temp.
V
IN-
=+1V
DC
, V
IN+
=0V
DC
,
V+=15V
DC
V
IN-
=+1V
DC
, V
IN+
=0V
DC
,
V+=15V
DC
, over temp.
V
IN+
=0V, V
IN-
=+1V
DC
,
V
O
=200mV
-120
-120
dB
I
OUT
20
40
20
40
mA
10
20
10
20
mA
Sink
10
20
10
20
mA
5
8
5
8
mA
12
50
12
50
μ
A
I
SC
Short circuit current
5
Differential input voltage
6
Unity gain bandwidth
Slew rate
Input noise voltage
40
60
V+
40
60
V+
mA
V
MHz
V/
μ
s
nV/
Hz
GBW
SR
V
NOISE
T
A
=25
°
C
T
A
=25
°
C
T
A
=25
°
C, f=1kHz
1
1
0.3
40
0.3
40
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