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參數(shù)資料
| 型號(hào)： | LLSD103A |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Switching Diode |
| 中文描述： | 0.35 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | GLASS, MINIMELF-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 585K |
| 代理商： | LLSD103A |
Features
l Low Reverse Recovery Time
l Low Reverse Capacitance
l Low Forward Voltage Drop
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: MiniMELF, Glass
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: Indicated by Cathode Band
l Weight: 0.05 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic
Symbol LLSD103A LLSD103B LLSD103C
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
40V
30V
20V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
28V
21V
14V
Forward Continuous Current(Note1)
IFM
Maximum Single cycle surge 60Hz
sine wave
IFSM
Power Dissipation(Note 1)
Pd
Thermal Resistance(Note 1)
R
Operation/Storage Temp. Range
Tj, TSTG
-55 to 150
o
C
15A
350mA
400mW
250K/W
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic
Symbol Min
Typ
Max
Test Cond.
Peak
LLSD103A
VR=30V
Reverse
LLSD103B
IRM
-----
5.0uA
VR=20V
Current
LLSD103C
VR=10V
Maximum Forward
VFM
-----
0.37V
IF=20mA
Voltage Drop
0.60V
IF=200mA
Junction Capacitance
Cj
-----
50
pF
VR=0V, f=1.0MHz
Reverse Recovery Time
trr
-----
10
ns
IF=IR=50mA to 200mA,
recover to 0.1 I R
Note: 1. Valid provided that electrodes are kept at ambient temperature
LLSD103A
THRU
LLSD103C
Schottky Barrier
Switching Diode
DIMENSION
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.134
.142
3.40
3.60
B
.008
.016
0.20
0.40
C
.055
.059
1.40
1.50
A
B
C
Cathode Mark
0.030”
0.105
0.075”
SUGGESTED SOLDER
PAD LAYOUT
MINIMELF
omponents
20736 Marilla Street Chatsworth
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$% !"#
MCC
Revision: 4
2006/05/30
TM
Micro Commercial Components
www.mccsemi.com
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