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參數(shù)資料
| 型號： | LL4151-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Switching 75V 0.3A 2-Pin Mini-MELF SOD-80 T/R |
| 中文描述： | Diodes (General Purpose, Power, Switching) 75 Volt 50mA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | LL4151-GS08 |
LL4151
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 16-Jul-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85559
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Reverse Current vs. Junction Temperature
Fig. 2 -
Forward Current vs. Forward Voltage
Fig. 3 -
Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 50 mA
V
R
= 50 V
V
R
= 50 V, T
j
= 150 °C
I
R
= 5 μA, t
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1 MHz,
V
HF
= 50 mV
I
F
= I
R
= 10 mA,
i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
SYMBOL
V
F
I
R
I
R
MIN.
TYP.
0.880
MAX.
1
50
50
UNIT
V
nA
μA
Reverse current
Breakdown voltage
V
(BR)
75
V
Diode capacitance
C
D
2
pF
Reverse recovery time
t
rr
4
ns
t
rr
2
ns
0
40
80
120
160
0.01
0.1
1
10
100
I
v
e
u
r
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 9151
V
R
= 50
V
Scattering Limit
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
- For
w
ard
V
oltage (
V
)
F
2.0
94 9152
T = 25 °C
T = 100 °C
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
C
-
D
V
R
- Re
v
erse
V
oltage (
V
)
100
94 9153
2.5
f = 1 MHz
T
j
= 25 °C
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| LL4151-GS18 | Diode Small Signal Switching 75V 0.3A 2-Pin Mini-MELF SOD-80 T/R |
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| LL4153 | HIGH SPEED SWITCHING DIODE |
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| LL4154-GS08 | SWITCHING DIODE GENPURP MINIMELF-E2 - Tape and Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LL4151-GS18 | 功能描述:二極管 - 通用，功率，開關(guān) 75 Volt 50mA 2.0 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| LL4151-M-08 | 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE GENPURP MINIMELF-E2-M |
| LL4151-M-18 | 制造商:Vishay Semiconductors 功能描述:SWITCHING DIODE GENPURP MINIMELF-E2-M |
| LL4152 | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR DIODES |
| LL4153 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:HIGH SPEED SWITCHING DIODE |
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