參數(shù)資料
型號(hào): LL41-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: SCHOTTKY DIODES SOD80 MINIMELF-E2 - Tape and Reel
中文描述: Schottky (Diodes & Rectifiers) 100mA 100 Volt 750mA IFSM
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 77K
代理商: LL41-GS18
LL41
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 09-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85671
Small Signal Schottky Diode
MECHANICAL DATA
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
For general purpose applications
This diode features low turn-on voltage and high
breakdown voltage
This device is protected by a PN junction
guardring against excessive voltage, such as
electrostatic discharges
This diode is also available in the DO-35 case with type
designation BAT41
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Pulse test, t
p
= 300 μs
PARTS TABLE
PART
LL41
ORDERING CODE
LL41-GS18 or LL41-GS08
INTERNAL CONSTRUCTION
Single diode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
(1)
Surge forward current
(1)
Power dissipation
(1)
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
tot
VALUE
100
100
350
750
200
UNIT
V
mA
mA
mA
mW
t
p
< 1 s,
< 0.5
t
p
= 10 ms
T
amb
= 65 °C
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
TEST CONDITION
SYMBOL
R
thJA
T
j
T
amb
T
stg
VALUE
300
(1)
125
- 65 to + 125
- 65 to + 150
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reserve breakdown voltage
(1)
TEST CONDITION
I
R
= 100 μA
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 100 °C
I
F
= 1 mA
I
F
= 200 mA
V
R
= 1 V, f = 1 MHz
SYMBOL
V
(BR)
I
R
I
R
V
F
V
F
C
D
MIN.
100
TYP.
110
MAX.
UNIT
V
nA
μA
mV
mV
pF
Leakage current
(1)
100
20
450
1000
Forward voltage
(1)
400
Diode capacitance
2
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