參數(shù)資料
型號(hào): LL101A-GS08
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Small Signal Schottky 60V 0.03A 2-Pin Mini-MELF SOD-80 T/R
中文描述: Schottky (Diodes & Rectifiers) 1mA 60 Volt
文件頁數(shù): 2/4頁
文件大?。?/td> 82K
代理商: LL101A-GS08
LL101A, LL101B, LL101C
Vishay Semiconductors
www.vishay.com
Rev. 1.4, 15-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85626
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Typ. I
F
vs. V
F
for Primary Conduction through the Schottky
Barrier
Fig. 2 - Typ. I
F
of Combination Schottky Barrier and PN Junction
Guard Ring
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
T
j
T
stg
VALUE
125
- 65 to + 150
UNIT
°C
°C
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
320
K/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
SYMBOL
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
D
C
D
C
D
t
rr
MIN.
60
50
40
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
mV
mV
mV
pF
pF
pF
ns
Reverse Breakdown Voltage
I
R
= 10 μA
Leakage current
V
R
= 50 V
V
R
= 40 V
V
R
= 30 V
I
F
= 1 mA
I
F
= 1 mA
I
F
= 1 mA
200
200
200
0.410
0.400
0.390
1000
950
900
2.0
2.1
2.2
1
Forward voltage drop
I
F
= 15 mA
Diode capacitance
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 MHz
Reverse recovery time
I
F
= I
R
= 5 mA, recover to 0.1 I
R
gll101a_01
gll101a_02
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LL101A-GS08 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier
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