參數(shù)資料
型號: LK802
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
中文描述: 硅柵增強型射頻功率LDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 35K
代理商: LK802
L2B 1 DIE ID, GM vs VG
0.1
1
10
100
0
2
4
6
8
10
12
14
Vgs in Volts
ID
GM
L2A 2DIE CAP ACIT ANCE
1
10
100
0
5
10
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
L K 802 P OUT VS P IN F = 1000 MHZ ; IDQ= 1.6A; VDS = 28V
20
30
40
50
60
0
0.5
1
1.5
2
2.5
3
3.5
4
P IN IN WAT T S
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
POUT
GAIN
Efficiency = 50%
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
LK802
L2A 2 DIE IV
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 04/27/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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