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參數(shù)資料
| 型號： | LK721 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
| 中文描述： | 硅柵增強型射頻功率LDMOS晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | LK721 |
L1C 1 DIE ID, GM vs VG
1
10
100
0
2
4
6
Vgs in Volts
8
10
12
14
ID
G
M
L1C 1DIE CAP ACIT ANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
LK 721 P OUT VS P IN Freq= 500MHz, VDS = 12.5V, Idq= .4A
0
5
10
15
20
25
30
35
40
45
50
55
0
1
2
3
4
5
6
7
8
P IN IN WAT T S
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
Pout
Gain
Efficiency = 69%
1dB compression = 30W
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
LK721
L1C 1 DIE IV
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
I
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 10/30/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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