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參數(shù)資料
| 型號(hào)： | LH5P864 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 512K (64K x 8) Pseudo-Static RAM |
| 中文描述： | 為512k的CMOS（64K的× 8）偽靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | LH5P864 |
AC CHARACTERISTICS
1,2,3
(T
A
= 0 to +70
°
C, V
CC
= 5.0 V
±
10%)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Random read, write cycle time
Read modify write cycle time
CE pulse width
CE precharge time
Address setup time
Address hold time
Read command setup time
Read command hold time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
R/W to output in Low-Z
Chip disable to output in High-Z
Output disable to output in High-Z
Write enable to output in High-Z
OE setup time
OE hold time
OE lead time
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write
Data setup time from CE
Data hold time from write
Data hold time from CE
Transition time (rise and fall)
Refresh time interval
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width (Auto refresh)
Refresh precharge time (Auto refresh)
CE delay time from refresh precharge (Auto
refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh precharge (Self refresh)
t
RC
t
RMW
t
CE
t
P
t
AS
t
AH
t
RCS
t
RCH
t
CEA
t
OEA
t
CLZ
t
OLZ
t
WLZ
t
CHZ
t
OHZ
t
WHZ
t
OES
t
OEH
t
OEL
t
WCP
t
WCS
t
WCH
t
DSW
t
DSC
t
DHW
t
DHC
t
T
t
REF
t
FC
t
RFD
t
FAP
t
FP
140
205
80
50
0
20
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
10,000
4
4
80
30
5
5
20
0
0
25
25
25
10
10
10
30
30
50
30
30
0
0
3
6
6
6
6
35
8
130
50
30
30
8,000
t
FCE
160
ns
t
FAS
t
FRS
8,000
160
ns
ns
NOTES:
1.
In order to initialize the circuit, CE
1
, CE
2
and OE/RFSH should
be kept in V
for 100
μ
s after power-up and followed by at least
8 dummy cycles.
2.
AC characteristics are measured at t
T
= 5 ns.
3.
AC characteristics are measured at the following condition (see
figure at right).
4.
Address is latched at the negative edge of CE
1
or CE
2
.
5.
Measured with a load equivalent to 2TTL + 100 pF.
6.
Data is latched at the positive edge of R/W or at the positive edge
of CE
1
or CE
2
.
2.4 V
0.8 V
2.6 V
0.6 V
2.2 V
0.8 V
OUTPUT
INPUT
5P864-3
Figure 3. AC Characteristics
LH5P864
CMOS 512K (64K
×
8) Pseudo-Static RAM
4
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| LH5PV16256 | CMOS 4M (256K x 16) Pseudo-Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5P864N-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH5PV16256 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 4M (256K x 16) Pseudo-Static RAM |
| LH5PV16256S12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Pseudo-Static RAM |
| LH5PV16256S-12LL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Pseudo-Static RAM |
| LH5PV8512 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 4M (512K x 8) Pseudo-Static RAM |
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