參數(shù)資料
型號: LH5P832
廠商: Sharp Corporation
英文描述: CMOS 256K (32K x 8) Pseudo-Static RAM
中文描述: 的CMOS 256K(32K的× 8)偽靜態(tài)存儲器
文件頁數(shù): 3/9頁
文件大小: 95K
代理商: LH5P832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Applied voltage on any pin
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
V
T
I
O
P
D
Topr
Tstg
-1.0 to +7.0
50
600
0 to +70
-55 to +150
V
1
mA
mW
°
C
°
C
NOTE:
1.
Referenced to GND
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
V
IH
V
IL
4.5
2.4
-1.0
5.0
5.5
V
V
V
Input voltage
V
CC
+ 0.3
+0.8
CAPACITANCE (V
CC
= 5.0 V
±
10%, T
A
= 0 to +70
°
C, f = 1 MHz)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
- A
14
, R/W
CE, OE/RFSH
I/O
1
- I/O
8
C
IN1
C
IN2
C
OUT1
8
5
12
pF
pF
pF
Input/output capacitance
DC CHARACTERISTICS (V
CC
= 5 V
±
10%, T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Operating current
Operating current
Standby current
Self refresh average current
CPU internal cycle
average current
CPU internal cycle
average current
Input leakage current
Output leakage current
Output High voltage
I
CC1
I
CC1
I
CC2
I
CC3
tRC = 160 ns
tRC = 190 ns
CE = V
IH
, OE/RFSH = V
IH
CE = V
IH
, OE/RFSH = V
IL
65
55
3
3
mA
mA
mA
mA
1, 2
1, 2
1
1
I
CC4
tRC = 160 ns
65
mA
1, 2
I
CC4
tRC = 190 ns
55
mA
1, 2
I
LI
I
LO
V
OH
V
OL
0 V
V
IN
6.5 V
0 V
V
OUT
V
CC
+ 0.3 V
I
OUT
= -1 mA
I
OUT
= 4 mA
-10
-10
2.4
10
10
μ
A
μ
A
V
3
Output Low voltage
0.4
V
NOTES:
1.
Specified values are with outputs open.
2.
I
CC1
and I
CC4
depend on the cycle time.
3.
The output pins are in high-impedance state.
AC TEST CONDITIONS
PARAMETER
MODE
NOTE
Input voltage amplitude
Input rise/fall time
Timing reference level
Output load conditions
0.6 to 2.4 V
5 ns
1.5 V
1TTL gate, C
L
= 100 pF
1
NOTE:
1.
Includes scope and jig capacitance.
CMOS 256K (32K
×
8) Pseudo-Static RAM
LH5P832
3
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