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參數(shù)資料
| 型號： | LH5116N-10 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 16K (2K x 8) Static RAM |
| 中文描述： | 的CMOS 16K的（2K × 8）靜態(tài)RAM |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | LH5116N-10 |
A
0
- A
10
D
OUT
t
WC
t
AW
t
CW
t
WP
t
WHZ
t
OW
t
DH
t
DW
t
WR
(NOTE 3)
t
AS
(NOTE 2)
(NOTE 4)
5116-4
WE
CE
D
IN
(NOTE 5)
(NOTE 6)
1. WE must be HIGH when there is a change in A
- A
.
2. When CE and WE are both LOW at the same time, write occurs during the period t
.
3. t
is the time from the rise of CE or WE, whichever is first, to the end of the write cycle.
4. If CE LOW transition occurs at the same time or after WE LOW transition, the outputs will remain high-impedance.
5. D
outputs data with the same logic level as the input data of this write cycle.
6. If CE is LOW during this period, the input/output pin is in the output state. During this state, input
signals of opposite logic level must not be applied.
OE = 'LOW'
NOTES:
Figure 5. Write Cycle 1
A
0
- A
10
D
OUT
t
WC
t
AW
(NOTE 2)
WE
D
IN
t
CW
t
WP
t
OHZ
t
OW
WR
t
DH
t
DW
(Nt
t
AS
t
OLZ
OE
CE
(NOTE 5)
(NOTE 6)
(NOTE 4)
5116-5
1. WE must be HIGH when there is a change in A
- A
.
2. When CE and WE are both LOW at the same time, write occurs during the period t
.
3. t
is the time from the rise of CE or WE, whichever is first, to the end of the write cycle.
4. If CE LOW transition occurs at the same time or after WE LOW transition, the outputs will remain high-impedance.
5. D
outputs data with the same logic level as the input data of this write cycle.
6. If CE is LOW during this period, the input/output pins are in the output state. During this state, input
signals of opposite logic level must not be applied.
NOTES:
Figure 6. Write Cycle 2
LH5116/H
CMOS 16K (2K
×
8) Static RAM
6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH5116S | CMOS 16K (2K x 8) Static RAM |
| LH51256L | CMOS 256K (32K X 8) STATIC RAM |
| LH51256 | CMOS 256K (32K X 8) STATIC RAM |
| LH5164AT-80L | CMOS 64K (8K x8) Static RAM(CMOS 64K (8K x8) 靜態(tài)RAM) |
| LH5164AZ8 | CMOS 64K (8K x 8) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5116NA-10 | 功能描述:IC SRAM 16KBIT 100NS 24SOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH5116NA-10F | 功能描述:IC SRAM 16KBIT 100NS 24SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| LH5116NA-10FTP | 制造商:Sharp Microelectronics 功能描述:5V SRAM |
| LH5116S | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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