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參數(shù)資料
| 型號(hào)： | LH5116D-10 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 16K (2K x 8) Static RAM |
| 中文描述： | 的CMOS 16K的（2K × 8）靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 87K |
| 代理商： | LH5116D-10 |
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
CC
V
IN
RATING
-0.3 to +7.0
-0.3 to V
CC
+ 0.3
0 to +70
-40 to +85
-55 to +150
UNIT
V
V
NOTE
1
1
2
3
Supply voltage
Input voltage
Operating temperature
Topr
°
C
Storage temperature
Tstg
°
C
NOTES:
1.
The maximum applicable voltage on any pin with respect to GND.
2.
Applied to the LH5116/D/NA
3.
Applied to the LH5116H/HD/HN
RECOMMENDED OPERATING CONDITIONS
1
PARAMETER
Supply voltage
SYMBOL
V
CC
V
IH
V
IL
MIN.
4.5
2.2
-0.3
TYP.
5.0
MAX.
5.5
V
CC
+ 0.3
0.8
UNIT
V
V
V
Input voltage
NOTE:
1.
T
A
= 0 to 70
°
C (LH5116/D/NA), T
A
= -40 to +85
°
C (LH5116H/HD/HN)
DC CHARACTERISTICS
1
(V
CC
= 5 V
±
10%)
PARAMETER
Output ‘LOW’ voltage
Output ‘HIGH’ voltage
Input leakage current
Output leakage current
SYMBOL
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
CONDITIONS
I
OL
= 2.1 mA
I
OH
= -1.0
mA
V
IN
= 0 V to V
CC
CE = V
IH
, V
I/O
= 0 V to V
CC
Outputs open (OE = V
CC
)
Outputs open (OE = V
IH
)
CE
≥
V
CC
- 0.2 V
All other input pins = 0 V to V
CC
MIN.
TYP.
MAX.
0.4
UNIT
V
V
μ
A
μ
A
mA
mA
NOTE
2.4
-1.0
-1.0
1.0
1.0
30
40
1.0
0.2
Operating current
25
30
2
3
Standby current
I
SB
μ
A
4
NOTES:
1.
T
A
= 0 to 70
°
C (LH5116/D/NA), T
A
= -40 to +85
°
C (LH5116H/HD/HN)
2.
CE = 0 V; all other input pins = 0 V to V
CC
3.
CE = V
IL
; all other input pins = V
IL
to V
IH
4.
T
A
= 25
°
C
AC CHARACTERISTICS
1
(1) READ CYCLE (V
CC
= 5 V
±
10%)
PARAMETER
SYMBOL
t
RC
t
AA
t
ACE
t
CLZ
t
OE
t
OLZ
t
CHZ
t
OHZ
t
OH
MIN.
100
TYP.
MAX.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
Read cycle time
Address access time
Chip enable access time
Chip enable Low to output in Low-Z
Output enable access time
Output enable Low to output in Low-Z
Chip disable to output in High-Z
Output disable to output in High-Z
Output hold time
100
100
10
2
40
10
0
0
10
2
2
2
40
40
NOTES:
1.
T
A
= 0 to 70
°
C (LH5116/NA/D). T
A
= -40 to 85
°
C (LH5116H/HD/HN).
2.
Active output to high-impedance and high-impedance to output active tests specified for a
±
200 mV transition
from steady state levels into the test load.
CMOS 16K (2K
×
8) Static RAM
LH5116/H
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH5116H-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116HD-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116HN-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116 | CMOS 16K (2K x 8) Static RAM |
| LH5116H | CMOS 16K (2K x 8) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5116H | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116H-10 | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116HD-10 | 制造商:Sharp Microelectronics Corporation 功能描述:2K X 8 STANDARD SRAM, 100 ns, PDIP24 |
| LH5116HN-10 | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116N-10 | 制造商:SHARP 制造商全稱(chēng):Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
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