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參數(shù)資料
| 型號(hào)： | LH5116-10 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 16K (2K x 8) Static RAM |
| 中文描述： | 的CMOS 16K的（2K × 8）靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 87K |
| 代理商： | LH5116-10 |
A
0
- A
10
D
OUT
t
WC
t
AW
t
CW
t
WP
t
WHZ
t
OW
t
DH
t
DW
t
WR
(NOTE 3)
t
AS
(NOTE 2)
(NOTE 4)
5116-4
WE
CE
D
IN
(NOTE 5)
(NOTE 6)
1. WE must be HIGH when there is a change in A
- A
.
2. When CE and WE are both LOW at the same time, write occurs during the period t
.
3. t
is the time from the rise of CE or WE, whichever is first, to the end of the write cycle.
4. If CE LOW transition occurs at the same time or after WE LOW transition, the outputs will remain high-impedance.
5. D
outputs data with the same logic level as the input data of this write cycle.
6. If CE is LOW during this period, the input/output pin is in the output state. During this state, input
signals of opposite logic level must not be applied.
OE = 'LOW'
NOTES:
Figure 5. Write Cycle 1
A
0
- A
10
D
OUT
t
WC
t
AW
(NOTE 2)
WE
D
IN
t
CW
t
WP
t
OHZ
t
OW
WR
t
DH
t
DW
(Nt
t
AS
t
OLZ
OE
CE
(NOTE 5)
(NOTE 6)
(NOTE 4)
5116-5
1. WE must be HIGH when there is a change in A
- A
.
2. When CE and WE are both LOW at the same time, write occurs during the period t
.
3. t
is the time from the rise of CE or WE, whichever is first, to the end of the write cycle.
4. If CE LOW transition occurs at the same time or after WE LOW transition, the outputs will remain high-impedance.
5. D
outputs data with the same logic level as the input data of this write cycle.
6. If CE is LOW during this period, the input/output pins are in the output state. During this state, input
signals of opposite logic level must not be applied.
NOTES:
Figure 6. Write Cycle 2
LH5116/H
CMOS 16K (2K
×
8) Static RAM
6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH5116D-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116H-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116HD-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116HN-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116 | CMOS 16K (2K x 8) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5116-10F | 功能描述:IC SRAM 16KBIT 100NS 24DIP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) |
| LH5116-12 | 制造商:Sharp Microelectronics Corporation 功能描述: |
| LH5116-15 | 制造商:Panasonic Industrial Company 功能描述:IC- MOS 16K S R |
| LH5116-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| LH5116D-10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
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