- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369760 > LH28F800SGB-L70 x16 Flash EEPROM PDF資料下載
參數(shù)資料
| 型號： | LH28F800SGB-L70 |
| 英文描述： | x16 Flash EEPROM |
| 中文描述： | x16閃存EEPROM |
| 文件頁數(shù)： | 14/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F800SGB-L70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁
LH28F160S5-L/S5H-L
- 14 -
sequence) may be performed. The status register
may be polled to determine if an error occurs
during the sequence.
To clear the status register, the Clear Status
Register command (50H) is written. It functions
independently of the applied V
PP
voltage. RP#
must be V
IH
. This command is not functional during
block erase, full chip erase, (multi) word/byte write,
block lock-bit configuration, block erase suspend or
(multi) word/byte write suspend modes.
4.5
Query database can be read by writing Query
command (98H). Following the command write,
read cycle from address shown in
Table 6 through
Table 10
retrieve the critical information to write,
erase and otherwise control the flash component.
A
0
of query offset address is ignored when x8
mode (BYTE# = V
IL
).
Query Command
Query data are always presented on the low-byte
data output (DQ
0
-DQ
7
). In x16 mode, high-byte
(DQ
8
-DQ
15
) outputs 00H. The bytes not assigned
to any information or reserved for future use are set
to "0". This command functions independently of
the V
PP
voltage. RP# must be V
IH
.
Table 5 Example of Query Structure Output
4.5.1 BLOCK STATUS REGISTER
This field provides lock configuration and erase
status for the specified block. These informations
are only available when device is ready (SR.7 = 1).
If block erase or full chip erase operation is finished
irregularly, block erase status bit will be set to "1". If
bit 1 is "1", this block is invalid.
MODE
OFFSET ADDRESS
OUTPUT
DQ
15-8
DQ
7-0
A
5
, A
4
, A
3
, A
2
, A
1
, A
0
1, 0, 0, 0, 0, 0 (20H)
1, 0, 0, 0, 0, 1 (21H)
1, 0, 0, 0, 1, 0 (22H)
1, 0, 0, 0, 1, 1 (23H)
A
5
, A
4
, A
3
, A
2
, A
1
1, 0, 0, 0, 0 (10H)
1, 0, 0, 0, 1 (11H)
High Z
High Z
High Z
High Z
"Q"
"Q"
"R"
"R"
x8 mode
x16 mode
00H
00H
"Q"
"R"
Table 6 Query Block Status Register
OFFSET
(Word Address)
(BA+2)H
LENGTH
DESCRIPTION
01H
Block Status Register
bit0
Block Lock Configuration
0 = Block is unlocked
1 = Block is locked
bit1
Block Erase Status
0 = Last erase operation completed successfully
1 = Last erase operation not completed successfully
bit2-7 Reserved for future use
NOTE :
BA = The beginning of a Block Address.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800SGE-L10 | x16 Flash EEPROM |
| LH28F800SGE-L100 | x16 Flash EEPROM |
| LH28F800SGE-L70 | x16 Flash EEPROM |
| LH28F800SGHB-L10 | x16 Flash EEPROM |
| LH28F800SGHB-L70 | x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800SGE-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGE-L100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGE-L70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGHB-L10 | 制造商:Sharp Microelectronics Corporation 功能描述: 制造商:Sharp Microelectronics Corporation 功能描述:512K X 16 FLASH 3.3V PROM, 100 ns, PBGA48 |
| LH28F800SGHB-L70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。