參數(shù)資料
型號(hào): LH28F800BVE-TTL90
廠商: Sharp Corporation
英文描述: 8M Flash Memory
中文描述: 分快閃記憶體
文件頁數(shù): 10/38頁
文件大?。?/td> 328K
代理商: LH28F800BVE-TTL90
LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
10
COMMAND
FIRST BUS CYCLE
SECOND BUS CYCLE
NOTE
OPER.
ADDRESS
DATA
OPER.
ADDRESS
DATA
Read Array
Write
X
FFH
Read
AA
AD
Intelligent Identifier
Write
X
90H
Read
IA
ID
1
Read Compatible Status Register
Write
X
70H
Read
X
CSRD
2
Clear Status Register
Write
X
50H
3
Word/Byte Write
Write
X
40H
Write
WA
WD
Alternate Word/Byte Write
Write
X
10H
Write
WA
WD
Block Erase/Confirm
Write
X
20H
Write
BA
D0H
Erase Suspend/Resume
Write
X
B0H
Write
X
D0H
ADDRESS
AA = Array Address
BA = Block Address
IA = Identifier Address
WA = Write Address
X = Don’t Care
DATA
AD = Array Data
CSRD = CSR Data
ID = Identifier Data
WD = Write Data
NOTES:
1. Following the intelligent identifier command, two Read operations access the manufacturer and device signature codes.
2. The CSR is automatically available after device enters Data Write, Erase or Suspend operations.
3. Clears CSR.3, CSR.4, and CSR.5. Also clears GSR.5 and all BSR.5 and BSR.2 bits. See Status register definitions.
LH28F008SA-Compatible Mode Command Bus Definitions
相關(guān)PDF資料
PDF描述
LH28F800SU 8M (512K 】 16, 1M 】 8) Flash Memory
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