參數(shù)資料
型號(hào)： LH28F800BJE-PBTL70
英文描述： Flash ROM
中文描述： 閃存ROM
文件頁數(shù)： 7/56頁
文件大?。?/td> 373K
代理商： LH28F800BJE-PBTL70
- 7 -
LH28F160S5-L/S5H-L
block erase, full chip erase, (multi) word/byte write
or block lock-bit configuration. STS High Z indicates
that the WSM is ready for a new command, block
erase is suspended and (multi) word/byte write are
inactive, (multi) word/byte write are suspended, or
the device is in deep power-down mode. The other
3 alternate configurations are all pulse mode for
use as a system interrupt.
The access time is 70 ns (t
AVQV
) at the V
CC
supply
voltage range of 4.75 to 5.25 V over the temperature
range, 0 to +70°C (LH28F160S5-L)/
–
40 to +85°C
(LH28F160S5H-L). At 4.5 to 5.5 V V
CC
, the access
time is 80 ns/100 ns (LH28F160S5-L70/S5-L10) or
90 ns/100 ns (LH28F160S5H-L70/S5H-L10).
The Automatic Power Saving (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
In APS mode, the typical I
CCR
current is 1 mA at
5 V V
CC
.
When either CE
0
# or CE
1
#, and RP# pins are at
V
CC
, the I
CC
CMOS standby mode is enabled.
When the RP# pin is at GND, deep power-down
mode is enabled which minimizes power
consumption and provides write protection during
reset. A reset time (t
PHQV
) is required from RP#
switching high until outputs are valid. Likewise, the
device has a wake time (t
PHEL
) from RP#-high until
writes to the CUI are recognized. With RP# at
GND, the WSM is reset and the status register is
cleared.
Fig. 1 Memory Map
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
1FFFFF
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
180000
17FFFF
170000
16FFFF
160000
15FFFF
150000
14FFFF
140000
13FFFF
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
0F0000
0EFFFF
0E0000
0DFFFF
0D0000
0CFFFF
0C0000
0BFFFF
0B0000
0AFFFF
0A0000
09FFFF
090000
08FFFF
080000
07FFFF
070000
06FFFF
060000
05FFFF
050000
04FFFF
040000
03FFFF
030000
02FFFF
020000
01FFFF
010000
00FFFF
000000
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
相關(guān)PDF資料
PDF描述
LH28F800BJE-PBTL90 Flash ROM
LH28F800BJE-PTTL10 Flash ROM
LH28F800BJE-PTTL70 Flash ROM
LH28F800BJE-PTTL90 x8/x16 Flash EEPROM
LH28F800BJE-PTTLZ1 Flash ROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F800BJE-PBTL90 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8M (x8/x16) Flash Memory
LH28F800BJE-PTTL10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F800BJE-PTTL70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F800BJE-PTTL90 功能描述:IC FLASH 8MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
LH28F800BJE-PTTLZ1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*